{"title":"Evaluation of a novel antimony source delivered as vapor from an implanter gas box","authors":"B. Isaacs, D. R. Seekon, D. Newman","doi":"10.1109/IIT.2002.1258041","DOIUrl":null,"url":null,"abstract":"A novel antimony compound has been developed for the ion implantation process. The dominant and current compound used in many applications is antimony trioxide, a solid material that must be vaporized at high temperatures within the ion source. This paper discusses the technique to be used to evaluate the volatile solid compound SbCH3Br2 (dibromomethyl-stibine) in comparison to the solid Sb2O3 (antimony trioxide). The delivery changes and requirements, and the methods used to compare the performance of the compounds will be discussed.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"119 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2002.1258041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel antimony compound has been developed for the ion implantation process. The dominant and current compound used in many applications is antimony trioxide, a solid material that must be vaporized at high temperatures within the ion source. This paper discusses the technique to be used to evaluate the volatile solid compound SbCH3Br2 (dibromomethyl-stibine) in comparison to the solid Sb2O3 (antimony trioxide). The delivery changes and requirements, and the methods used to compare the performance of the compounds will be discussed.