Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on最新文献_第5页

Fabrication of 60-nm plasma doped CMOS transistors 60纳米等离子体掺杂CMOS晶体管的制备

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257932

D. Lenoble, A. Grouillet, F. Boeuf, T. Skotnicki, D. Hacker, J. Scheuer, S. Walther

引用次数: 2

Stability improvement of Therma-Wave signal by pre-annealing 利用预退火技术提高热波信号的稳定性

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257986

M. Harada, M. Sano, H. Izutani

引用次数: 1

Study of damage formation by low-energy boron cluster ion implantation 低能硼簇离子注入形成损伤的研究

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258066

T. Aoki, J. Matsuo, G. Takaoka

引用次数: 1

Development of new antimony and indium dopants for ion implantation 离子注入用新型锑、铟掺杂剂的研制

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258024

Z. Wang, C. McMahon, C. Xu, T. H. Baum, J. Mayer, L. Wang

引用次数: 0

Ultra-shallow p-n junction formation by ion implantation at high energy? 高能离子注入形成超浅p-n结

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258075

A. Vyatkin, V. Zinenko, A. Pustovit, Y. Agafonov

{"title":"Ultra-shallow p-n junction formation by ion implantation at high energy?","authors":"A. Vyatkin, V. Zinenko, A. Pustovit, Y. Agafonov","doi":"10.1109/IIT.2002.1258075","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258075","url":null,"abstract":"Further CMOS device scaling beyond 0.13μm requires very shallow p-n junction formation for the source and drain extensions. Ultra-low energy ion implantation is the key process to achieve this goal. Two principal drawbacks of the process: sample surface proximity to the implanted species,and space proximity of the dopant atoms and radiation damages accompanied by the enhanced diffusion phenomena give rise to the complexity of the shallow junction formation. It is known that even at high energy implantation, a surface-related peak of dopants is clearly seen by SIMS in implanted samples. Some authors consider the peak as an artificial effect of the SIMS. However, there are several physical reasons in support of the surface peak really existing. If it is the case, it suggests a way to produce a super ultra shallow p-n junctions with relatively high energy ion implantation when the main area of the radiation damages and subsurface area are separated in space. B+, Li+, Na+ and P+ have been implanted at 40 - 200 keV into Si wafers to find out the conformations of the dopants surface peak reality. SIMS analysis has been used to estimate the dopant atoms depth distribution. Enhanced depth resolution of the SIMS technique used allows to prove the surface-related dopant atoms existence.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128054141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Refurbishment of epoxy accelerator column bushings 环氧加速柱衬套翻新

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258036

H. Peebles, S. Bishop

引用次数: 0

Influence of batch-to-batch substrate variation and cone effect on high energy implant distribution profile 批间衬底变化和锥效应对高能植入物分布的影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257995

Y. Hai, E. Shauly

引用次数: 0

Reduction of charge exchange effects on the VIISta810 减少电荷交换对VIISta810的影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258034

M. Schmeide, G. Gammel, J. Scheuer

{"title":"Reduction of charge exchange effects on the VIISta810","authors":"M. Schmeide, G. Gammel, J. Scheuer","doi":"10.1109/IIT.2002.1258034","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258034","url":null,"abstract":"The VIISta810 medium current implanter can be used in a wide range of applications due to its good process performance, high productivity and low cost of ownership. However, tests have shown that at the elevated pressures characteristic of high energy, high dose applications, charge exchange effects can result in dose and uniformity issues. These pressures can be avoided by use of the end station pressure interlock, which, however, leads to a reduction in throughput. In moving from the VIISta810 to the VIISta810HP, additional cryo pumps were installed, one on the process chamber and one on the corrector magnet chamber, to improve the vacuum performance. Furthermore, the position of the closed-loop Faraday was moved upstream and an adjustable, conductance limiting aperture was installed. To test the repeatability and uniformity dependence on process parameters and photo resist coverage, 200 and 300 mm cross hair wafers were implanted with the VIISta810 and VIISta810HP vacuum configurations. Maximum energy and 80% of the maximum beam current for single and double charged ions of various species were applied. Sheet resistance measurements were performed and vacuum pressures and beam current variations were recorded. Test results have shown that the improvements lead to a distinct reduction of the charge exchange effects and their influence on dose. The upgraded vacuum configuration, provided good dose repeatability and uniformity on photoresist wafers, even in the high energy and high dose range, without reduction in throughput relative to bare wafers.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115778409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gas-phase FT-IR characterization of ion implant process effluents

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258044

J. Arno, J. Sweeney, Paul J. Marganski, R. Faller, S. Roberge, M. C. Dolan

{"title":"Gas-phase FT-IR characterization of ion implant process effluents","authors":"J. Arno, J. Sweeney, Paul J. Marganski, R. Faller, S. Roberge, M. C. Dolan","doi":"10.1109/IIT.2002.1258044","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258044","url":null,"abstract":"Ion implant processes utilize materials that are potentially toxic to humans and damaging to the environment. Consequently, a number of preventive measures have been implemented to address environmental control and to minimize worker exposure risks. Safer dopant handling and delivery can be achieved by using reduced pressure gas sources. Materials not implanted onto wafers are instantly exhausted from the tool through roughing pumps or accumulated and later discharged using cryo pumps. Up until now, there has been limited knowledge about the nature and volume of gaseous emissions released by ion implant tools. Such information can be used to assess post-pump environmental and safety hazards, provide indirect measures of dopant utilization efficiencies, and offer crucial details necessary to customize pollution control solutions. This paper summarizes the analyses performed at the exhaust of selected roughing and cryo pumps of an Axcelis GSD-VHE ion implanter. Analyses were performed during standard implant processes using arsine (AsH3), phosphine (PH3), and boron trifluoride (BF3) sources. The characterization study was performed in a quantitative, continuous, in-line mode using a Fourier transform infrared (FT-IR) spectrophotometer. The analytical tool was calibrated in-situ to attain accurate measurements. Continuous monitoring provided time dependent concentrations of selected species during tuning and implant stages. In addition, characterization studies during cryo regeneration identified the temperature dependent release of a number of parent dopant and process by-product species.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125025780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Introduction of the new high voltage, engineering (HVE) accelerator for high energy/high current ion implantation 介绍用于高能/大电流离子注入的新型高压工程加速器

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258050

R. Koudijs, A. Gottdang, D. Mous

引用次数: 0