Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on最新文献_第6页

Optimization of P+/N junction formation using solid phase epitaxy for the 100 nm technology node and beyond 采用固相外延技术优化100纳米及以上节点的P+/N结形成

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258100

H. Graoui, A. Al-Bayati, M. Duane, R. Tichy

{"title":"Optimization of P+/N junction formation using solid phase epitaxy for the 100 nm technology node and beyond","authors":"H. Graoui, A. Al-Bayati, M. Duane, R. Tichy","doi":"10.1109/IIT.2002.1258100","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258100","url":null,"abstract":"P+/N diodes are fabricated using a low energy boron implant followed by solid phase epitaxial (SPE) growth at 600°C. The pre-amorphization step was done using Germanium at either 10 keV or 80 keV, both with a dose of 1 × 1015 ions/cm2. Next, boron was implanted at a range of energies from 0.5 keV to 5 keV. The sheet resistance (Rs) measurements and the secondary ion mass spectrometry (SIMS) analysis from the SPE based diodes showed very good results that meet the Junction depth and the sheet resistance requirements for the 100 nm and 70 nm technology nodes using a 10 keV Ge+ pre-amorphization and sub-keV boron implant. However, these diodes were leaky because of the end of range (EOR) defects positioned within their depletion regions. At higher boron energies (2-5 keV), the remaining EOR defects from the 10 keV germanium pre-amorphization step were positioned closer to the surface and farther from the depletion region. These diodes showed lower leakage current densities by two orders of magnitude and a breakdown voltage greater than -4 V. This highlights the strong relationship between the SPE diode characteristics and the remaining EOR position with regards to the depletion region.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122642784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

The distribution of boron and arsenic in SOI wafers implementing SIMS 硼砷在模拟模拟SOI晶圆中的分布

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1278881

C. Mulcahy, S. Biswas, I. Kelly, D. Kirkwood, E. Collart

引用次数: 1

Effect of microwave radiation on boron activation 微波辐射对硼活化的影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258062

K. Thompson, J. Booske, D. Downey, E. Arevalo

引用次数: 6

Effects of beam incident angle control on NMOS source/drain extension applications 光束入射角控制对NMOS源漏扩展应用的影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257939

Ukyo Jeong Ukyo Jeong, S. Mehta, C. Campbell, R. Lindberg, Zhiyong Zhao Zhiyong Zhao, B. Cusson, J. Buller

{"title":"Effects of beam incident angle control on NMOS source/drain extension applications","authors":"Ukyo Jeong Ukyo Jeong, S. Mehta, C. Campbell, R. Lindberg, Zhiyong Zhao Zhiyong Zhao, B. Cusson, J. Buller","doi":"10.1109/IIT.2002.1257939","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257939","url":null,"abstract":"As CMOS device technology is scaled in pursuit of ever improving circuit performance requirements, ion implant processing must meet the demands imposed by this device scaling. Control of beam incident angle on high current implanters is one unprecedented criterion imposed on modern ion implant doping technology. While other implant doping characteristics can be easily evaluated using bare wafer analysis techniques, the angular integrity of the ion beam cannot. Shadowing is one consequence of the uncontrolled beam incident angle that leads to dose inaccuracy at the microscopic scale in device regions of interest. Such effects can only be evaluated in association with their device performance. This paper describes the effects of beam incident angle control on source/drain extension (SDE) doping for a state-of-the-art CMOS transistor technology. Device characteristics were measured and analyzed to evaluate the ion beam shadowing effects at an individual device level. This paper also suggests the level of angle control required in ion implant systems based on device characterization results.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129497143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

TCAD modeling and experimental investigation of indium for advanced CMOS technology 先进CMOS技术中铟的TCAD建模与实验研究

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257955

H. Graoui, A. Al-Bayati, A. Erlebach, C. Zechner, F. Benistant, A. Allen, P. Banks, A. Murrell

{"title":"TCAD modeling and experimental investigation of indium for advanced CMOS technology","authors":"H. Graoui, A. Al-Bayati, A. Erlebach, C. Zechner, F. Benistant, A. Allen, P. Banks, A. Murrell","doi":"10.1109/IIT.2002.1257955","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257955","url":null,"abstract":"Indium is a key element in the formation of well, channel, and HALO profiles, especially for very deep sub-μm technologies with gate length below 150nm. Indium (115In+) has the advantage of being a large atom and having a small projected range. Hence ion implanted indium produces steeper profiles than boron, providing that the retrograde doping is maintained after the subsequent annealing steps. Therefore, knowledge of the diffusion behavior of indium is extremely important. In this work, Indium diffusion and dose loss are studied both experimentally and by TCAD simulation. N-type silicon wafers were capped with a 50Å thick SiO2 layer, followed by In+ implantation on an Applied Materials Quantum LEAP™ ion implanter at a range of energies from 50keV to 150keV, and at different doses from 1E13 ions/cm2 to 1E14 ions/cm2. The wafers were then annealed under different annealing conditions reflecting typical well and HALO anneal steps, and for calibration purposes. Calibration of the process simulation was done for indium implantation and diffusion, allowing us to describe Indium implantation and diffusion in general, and quantitatively for special effects such as double peak formation and dose loss. It is shown that the double peak, which appears for an Indium dose higher than 4E13/cm2 and energies higher than 50keV for selected anneal conditions, is strongly related to amorphization and defect distribution after implantation. The dose loss is diffusion limited and therefore controlled by the diffusion coefficients in the region close to the silicon surface.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131589361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

SIMS analysis of small area device samples SIMS分析小面积设备样本

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257991

D. Sams, L. Wang, A. Wang, J. Sheng

引用次数: 0

Ultra shallow junction monitoring 超浅结监测

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257987

S. Cherekdjian, L. Nicolaides, M. Bakshi

引用次数: 0

Monitoring of ion implanters using multiple dopants 使用多种掺杂剂的离子注入监测

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258013

R. Pong, J. Schuur, W. Weisenberger, R. Johnson

引用次数: 0

Characterization of charging damage in plasma doping 等离子体掺杂中充电损伤的表征

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257973

D. Henke, S. Walther, J. Weeman, T. Dirnecker, A. Ruf, A. Beyer, K. Lee

引用次数: 3

Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments 砷浅层植入物的磁性扇形和飞行时间SIMS仪器表征

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257990

M. Bersani, P. Lazzeri, D. Giubertoni, M. Barozzi, E. Marchi, M. Anderle

引用次数: 2