等离子体掺杂中充电损伤的表征

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1257973

D. Henke, S. Walther, J. Weeman, T. Dirnecker, A. Ruf, A. Beyer, K. Lee

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引用次数: 3

摘要

采用带有不同尺寸和形状天线的MOS电容器对等离子体掺杂(PLAD)中的充电损伤进行了表征。附加的抗蚀剂模式提供了研究光抗蚀剂对充电损伤的影响的可能性。PLAD植入物的测试使用许多等离子体电流密度和植入物脉冲宽度来探索广泛的工艺条件。研究了不同掺杂剂的能量、剂量和占空比对充电损伤的影响。

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Characterization of charging damage in plasma doping

MOS capacitors with attached antennas of different size and shape were used to characterize the charging damage in PLAsma Doping (PLAD). Additional resist patterns offer the possibility to investigate the impact of photoresist on charging damage. This test of PLAD implants uses a number of plasma current densities and implant pulse widths to explore a wide range of process conditions. The charging damage was studied for process variations of energy, dose and duty cycles for different dopants.

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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