Characterization of charging damage in plasma doping

Abstract

MOS capacitors with attached antennas of different size and shape were used to characterize the charging damage in PLAsma Doping (PLAD). Additional resist patterns offer the possibility to investigate the impact of photoresist on charging damage. This test of PLAD implants uses a number of plasma current densities and implant pulse widths to explore a wide range of process conditions. The charging damage was studied for process variations of energy, dose and duty cycles for different dopants.