Development of new antimony and indium dopants for ion implantation

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1258024

Z. Wang, C. McMahon, C. Xu, T. H. Baum, J. Mayer, L. Wang

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Abstract

Three antimony and indium compounds, CH₃SbBr₂, (SbCl₃)·[SbCl₃·S(CH₃)₂] and (hfac)In(CH₃)₂ were synthesized and characterized by spectroscopic methods. These compounds are highly volatile with excellent thermal stability. CH₃SbBr₂ contains only one carbon that may minimize carbon incorporation. (SbCl₃)·[SbCl₃·S(CH₃)₂] is a new volatile dimeric compound. (hfac)In(CH₃)₂ is an air and moisture stable compound and is readily sublimed at room temperature. These compounds show promise for use as ion implant dopants.

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离子注入用新型锑、铟掺杂剂的研制

合成了三种锑铟化合物CH3SbBr2、(SbCl3)·[SbCl3·S(CH3)2]和(hfac)In(CH3)2，并用光谱方法对其进行了表征。这些化合物挥发性强，热稳定性好。CH3SbBr2只含有一个碳，可以减少碳的掺入。(SbCl3)·[SbCl3·S(CH3)2]是一种新型挥发性二聚体化合物。(hfac)In(CH3)2是一种空气和水分稳定的化合物，在室温下容易升华。这些化合物有望用作离子植入剂。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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