Z. Wang, C. McMahon, C. Xu, T. H. Baum, J. Mayer, L. Wang
{"title":"离子注入用新型锑、铟掺杂剂的研制","authors":"Z. Wang, C. McMahon, C. Xu, T. H. Baum, J. Mayer, L. Wang","doi":"10.1109/IIT.2002.1258024","DOIUrl":null,"url":null,"abstract":"Three antimony and indium compounds, CH<sub>3</sub>SbBr<sub>2</sub>, (SbCl<sub>3</sub>)·[SbCl<sub>3</sub>·S(CH<sub>3</sub>)<sub>2</sub>] and (hfac)In(CH<sub>3</sub>)<sub>2</sub> were synthesized and characterized by spectroscopic methods. These compounds are highly volatile with excellent thermal stability. CH<sub>3</sub>SbBr<sub>2</sub> contains only one carbon that may minimize carbon incorporation. (SbCl<sub>3</sub>)·[SbCl<sub>3</sub>·S(CH<sub>3</sub>)<sub>2</sub>] is a new volatile dimeric compound. (hfac)In(CH<sub>3</sub>)<sub>2</sub> is an air and moisture stable compound and is readily sublimed at room temperature. These compounds show promise for use as ion implant dopants.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of new antimony and indium dopants for ion implantation\",\"authors\":\"Z. Wang, C. McMahon, C. Xu, T. H. Baum, J. Mayer, L. Wang\",\"doi\":\"10.1109/IIT.2002.1258024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three antimony and indium compounds, CH<sub>3</sub>SbBr<sub>2</sub>, (SbCl<sub>3</sub>)·[SbCl<sub>3</sub>·S(CH<sub>3</sub>)<sub>2</sub>] and (hfac)In(CH<sub>3</sub>)<sub>2</sub> were synthesized and characterized by spectroscopic methods. These compounds are highly volatile with excellent thermal stability. CH<sub>3</sub>SbBr<sub>2</sub> contains only one carbon that may minimize carbon incorporation. (SbCl<sub>3</sub>)·[SbCl<sub>3</sub>·S(CH<sub>3</sub>)<sub>2</sub>] is a new volatile dimeric compound. (hfac)In(CH<sub>3</sub>)<sub>2</sub> is an air and moisture stable compound and is readily sublimed at room temperature. These compounds show promise for use as ion implant dopants.\",\"PeriodicalId\":305062,\"journal\":{\"name\":\"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2002.1258024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2002.1258024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of new antimony and indium dopants for ion implantation
Three antimony and indium compounds, CH3SbBr2, (SbCl3)·[SbCl3·S(CH3)2] and (hfac)In(CH3)2 were synthesized and characterized by spectroscopic methods. These compounds are highly volatile with excellent thermal stability. CH3SbBr2 contains only one carbon that may minimize carbon incorporation. (SbCl3)·[SbCl3·S(CH3)2] is a new volatile dimeric compound. (hfac)In(CH3)2 is an air and moisture stable compound and is readily sublimed at room temperature. These compounds show promise for use as ion implant dopants.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
