凹结和低能n结注入特性

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1257947

B. C. Lee, J. Yoo, D. Lee, C. S. Kim, S. M. Kim, S. Choi, U. Chung, J. Moon

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引用次数: 0

摘要

研究了低能量结植入和原位掺磷选择性硅生长形成的凹槽结电池晶体管的特性。低能n结注入大大降低了衬垫/n结的接触电阻。同时，在不降低击穿电压和泄漏特性的前提下，提高了驱动电流。在UHV CVD室中，利用Cl2气体化学进行无等离子体损伤的TDSE(热解吸硅蚀刻)工艺来控制结深。采用选择性外延生长(SEG)工艺制备了掺磷硅的凹槽结，并对凹槽结的特性进行了评价。

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Recessed junction and low energy n-junction implantation characteristics

The characteristics of cell transistor with low energy junction implantation and recessed junction, which is formed by in_situ phosphorus doped selective silicon growth, are investigated. Adding the low energy n-junction implantation drastically reduces the contact resistance of pad/n-junction. And also, the drive current is improved without any degradation of BV (Breakdown Voltage) and leakage characteristics. Plasma damage free TDSE (Thermal Desorption of Silicon Etching) processing using the Cl2 gas chemistry in UHV CVD Chamber is used to control the junction depth. The recessed junction is formed with phosphorus-doped silicon using the SEG (Selective Epitaxial Growth) process and the characteristics of recessed junction are evaluated.

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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