大梁质量分析的优化

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1258037

D. Aitken

{"title":"大梁质量分析的优化","authors":"D. Aitken","doi":"10.1109/IIT.2002.1258037","DOIUrl":null,"url":null,"abstract":"A large beam mass analysis system for both the high current implant of wafers over a very wide energy range (100 eV-100 keV) and/or the implant of large substrates (up to 1 metre) is described. The advantages of the sextupole geometry for the prevention of light ion beam reflection and the intrinsic insensitivity of this technique to beam quality are emphasised.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optimisation of large beam mass analysis\",\"authors\":\"D. Aitken\",\"doi\":\"10.1109/IIT.2002.1258037\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A large beam mass analysis system for both the high current implant of wafers over a very wide energy range (100 eV-100 keV) and/or the implant of large substrates (up to 1 metre) is described. The advantages of the sextupole geometry for the prevention of light ion beam reflection and the intrinsic insensitivity of this technique to beam quality are emphasised.\",\"PeriodicalId\":305062,\"journal\":{\"name\":\"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2002.1258037\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2002.1258037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

描述了一种大型光束质量分析系统，用于在非常宽的能量范围内(100 eV-100 keV)的晶圆的高电流植入和/或大型基板的植入(高达1米)。强调了六极几何结构在防止光离子束反射方面的优点以及该技术对光束质量的固有不敏感性。

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Optimisation of large beam mass analysis

A large beam mass analysis system for both the high current implant of wafers over a very wide energy range (100 eV-100 keV) and/or the implant of large substrates (up to 1 metre) is described. The advantages of the sextupole geometry for the prevention of light ion beam reflection and the intrinsic insensitivity of this technique to beam quality are emphasised.

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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