重铁注入InP的光学性质及应用

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1258090

T. Cesca, A. Gasparotto, B. Fraboni, F. Priolo, E. C. Moreira, G. Scamarcio

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引用次数: 1

摘要

在n掺杂InP中，采用了不同的铁注入方案来制备具有所需特性的半绝缘层。通过电流-电压测量和深度分析研究了这些结构的电学特性;n掺杂补偿达到1019 cm-3已被证实。在260k温度下，衬底掺杂浓度最高的补偿样品也获得了电致发光。

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Optical properties and applications of heavily Fe implanted InP

Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating layers with the desired characteristics. The electrical properties of these structures have been investigated by means of current-voltage measurements and deep level analyses; compensation of n-doping up to 1019 cm-3 has been verified. Electroluminescence emission has also been obtained from the compensated samples with the highest substrate doping concentration up to the temperature of 260 K.

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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