Successful integration of in-situ particle monitoring into a volume 300mm high current implant manufacturing system

Abstract

Reduction in cost-per-wafer is the prime motivation driving the industry-wide migration towards 300 mm. Integrated in-situ particle level monitoring (ISPM) with conventional ion implantation provides tremendous benefits in metrology cost savings, production cycle time reductions, and smoother manufacturing processing flows. In-situ particle monitoring will be crucial to optimizing process conditions and reducing the downtime/expense associated with running wafer based monitors. This includes better understanding and minimizing particle contamination; not only during the implant process, but also the influence of this contamination to down stream processes. A full integration of a particle monitor system into a volume manufacturing high current implant is described. Correlating data comparisons versus traditional metrology methods are offered to demonstrate that the sensor functions with sufficient reliability, sensitivity, and consistency that it offers a cost attractive alternative to conventional ex-situ monitor wafer practices.