Cleaning procedure for indium implantation

Abstract

Indium implantation in a medium current ion implantation becomes a common requirement for the next generation VLSI fabrication. It is essential to keep high utilization rate of equipment to reduce the cost of VLSI fabrication. As for a medium current ion implanter, running all ion species including indium ion in one machine is the solution to keep high utilization rate of the machine. To use the indium ion with other ion species in a medium current ion implanter, it is necessary to control the cross contamination of the indium when implantation other ion species. In this paper, experimental data of the indium cross contamination at B, P, As implantation is reviewed and effective cleaning procedure to reduce cross contamination and other side effects of indium usage is reported.