A compact model for the simulation of ion implantation

Abstract

The use of computer simulation for ion implantation helps for a basic understanding of the interaction of the ion with the target as well as for faster development and improvement of semiconductor devices. A model for the transport of ions in a crystalline target material is introduced. Applying Monte Carlo statistics on this model, distributions of ions in the target, crystal damage, and temperature during implant in space and time can be calculated. Channeling is taken into account by the model, crystal damage by lattice distortion. The results of a computer implementation of the model are in good agreement with SIMS measurements and demonstrate the flexibility of the model for complex structures and implant situations.