在300mm晶圆上在线测量Xj

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1257965

S. Corcoran, P. Gillespie, M. Segovia, P. Borden

{"title":"在300mm晶圆上在线测量Xj","authors":"S. Corcoran, P. Gillespie, M. Segovia, P. Borden","doi":"10.1109/IIT.2002.1257965","DOIUrl":null,"url":null,"abstract":"Process control issues are insufficiently addressed by current metrology for USJ formation on 300 mm wafers at advanced technology nodes. The Carrier Illumination™ technique, an in-line optical approach, is examined for use in process control (SPC) and implant/anneal root-cause isolation (characterization).","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"In-line measurement of Xj on 300 mm wafers\",\"authors\":\"S. Corcoran, P. Gillespie, M. Segovia, P. Borden\",\"doi\":\"10.1109/IIT.2002.1257965\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Process control issues are insufficiently addressed by current metrology for USJ formation on 300 mm wafers at advanced technology nodes. The Carrier Illumination™ technique, an in-line optical approach, is examined for use in process control (SPC) and implant/anneal root-cause isolation (characterization).\",\"PeriodicalId\":305062,\"journal\":{\"name\":\"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2002.1257965\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2002.1257965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在先进技术节点的300毫米晶圆上形成USJ，目前的计量方法无法充分解决工艺控制问题。载波照明™技术是一种在线光学方法，用于过程控制(SPC)和植入/退火根本原因隔离(表征)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

In-line measurement of Xj on 300 mm wafers

Process control issues are insufficiently addressed by current metrology for USJ formation on 300 mm wafers at advanced technology nodes. The Carrier Illumination™ technique, an in-line optical approach, is examined for use in process control (SPC) and implant/anneal root-cause isolation (characterization).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

自引率

0.00%

发文量