Photoresist wafer processing with the SWIFT ion implanter

Abstract

Photoresist (PR) outgassing during implantation can be significant for high current, high energy implants, and if ignored, can result in dose variations. The SWIFT ion implanter uses an intelligent software algorithm in conjunction with fast beam sampling to allow the system to reliably compensate for photoresist outgassing, allowing excellent wafer-to-wafer dose repeatability. In addition, the beam charge recovery tolerance has been made configurable, to allow easy optimization of system throughput versus dose control. In this paper, performance data is presented for photoresist wafers implanted using the intelligent software algorithm compared to bare wafers implanted under identical conditions.