提高深亚微PMOS器件灵敏度的高倾角口袋植入工艺优化

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1257926

Kun-Yang Yeh, M. Chiang, C. Tsai, Y. L. Wang, J. K. Wang

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引用次数: 1

摘要

高倾斜口袋植入物在倾斜和扭转组合的各种条件下进行评估。研究了倾角对0.13 μm PMOS器件电阻和特性的影响。由倾角的变化可知。口袋植入物的横向掺杂轮廓和衬底沟道效应将决定PMOS器件的灵敏度。提出了一种利用沟道效应来提高器件稳定性的简单方法。在特定倾斜和扭转角度的晶体通道的辅助下，PMOS驱动电流对倾斜角度的灵敏度将大大降低67%，达到0.03 mA/度及以下。

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Optimization of high tilt pocket implant process for improving deep sub-micro PMOS device sensitivity

High tilt pocket implants are evaluated for various conditions of tilt and twist combination. The effects of tilt angle on both sheet resistance (Rs) and 0.13 μm PMOS device characteristics are investigated. By variation of tilt angle it is shown that. both lateral dopant profile of pocket implant and substrate channeling effect will dominate the PMOS device sensitivity. A simple solution to good device stability by employing the channeling effect is demonstrated. With the assist of crystal channel at specific tilt and twist angle, the PMOS drive current sensitivity to tilt angle will be greatly reduced by 67% to 0.03 mA/degree and below.

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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