SWIFT离子注入器的光刻胶晶圆加工

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1257999

K. Mast, R. Low, D. Knowles, M. Junker

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引用次数: 0

摘要

在植入过程中，光刻胶(PR)脱气对于大电流、高能量的植入物是非常重要的，如果忽视，可能会导致剂量变化。SWIFT离子注入器使用智能软件算法与快速光束采样相结合，使系统能够可靠地补偿光刻胶脱气，从而实现优异的片对片剂量重复性。此外，束流电荷恢复容限是可配置的，以便轻松优化系统吞吐量与剂量控制。本文给出了使用智能软件算法植入光刻胶晶片的性能数据，并与相同条件下裸片植入的性能数据进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photoresist wafer processing with the SWIFT ion implanter

Photoresist (PR) outgassing during implantation can be significant for high current, high energy implants, and if ignored, can result in dose variations. The SWIFT ion implanter uses an intelligent software algorithm in conjunction with fast beam sampling to allow the system to reliably compensate for photoresist outgassing, allowing excellent wafer-to-wafer dose repeatability. In addition, the beam charge recovery tolerance has been made configurable, to allow easy optimization of system throughput versus dose control. In this paper, performance data is presented for photoresist wafers implanted using the intelligent software algorithm compared to bare wafers implanted under identical conditions.

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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