European Workshop Materials for Advanced Metallization,最新文献_第3页

Investigations of the interaction between different barrier metals and copper surface during the chemical-mechanical polishing 化学机械抛光过程中不同阻挡金属与铜表面相互作用的研究

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621087

D. Zeidler, Z. Stavreva, M. Plotner, K. Drescher

引用次数: 0

Optimization and control of PVD TiN uniformity PVD TiN均匀性的优化与控制

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887506

L. Asinovsky

{"title":"Optimization and control of PVD TiN uniformity","authors":"L. Asinovsky","doi":"10.1109/MAM.1998.887506","DOIUrl":"https://doi.org/10.1109/MAM.1998.887506","url":null,"abstract":"Thin titanium nitride (TiN/sub x/) films have numerous applications in VLSI metallization technology. One of the main uses of this material is as a barrier layer for Al interconnect. The demand for barrier material is to prevent interdiffusion while maintaining low resistivity. Thus, uniformity is desired in both composition and thickness. Standard reactive ion sputtering is a widely used deposition technique well suited for TiN/sub x/ barriers. Physical properties and uniformity of the TiN films are strongly dependent on deposition conditions. In a production environment, however, sputtered films need to be reproducible and uniform across the wafer's diameter. Although TiN/sub x/ thickness and uniformity data is commonly derived from sheet resistance measurements, sheet resistance is sensitive to stoichiometry as well as thickness and can give incorrect results. To optimize deposition conditions for uniform thickness and monitor TiN/sub x/ films in production environment, a more reliable metrology control is needed. This paper presents results of a reactive sputtering process optimization using production multiple angle-of-incidence (MAI) ellipsometer with blue laser (wavelength of 459nm) as the metrology tool.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121682284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Local nucleation and lateral crystallisation of the silicide phases in CoSi2 buffer layer of YBCO/CoSi2/Si structure YBCO/CoSi2/Si结构中CoSi2缓冲层中硅化物相的局部成核和侧向结晶

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621114

I. Belousov, E. Rudenko, S. Linzen, P. Seidel

引用次数: 1

Deposition of thin TiN films by low-power reactive magnetron sputtering 低功率磁控溅射沉积TiN薄膜

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621094

P.V. Mikhal'chuk, A. Orlikovsky, A. G. Vasiliev, O. Lebedev, D. Zakharov

引用次数: 0

Metal etcher characterization using flash memory cells as charge sensors 用快闪记忆电池作为电荷传感器的金属蚀刻器特性

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887550

S. Alba, A. Colognese, E. Ghio

引用次数: 0

Ultra trace analysis and electrical characterization of Cu diffusion through thin quasi-amorphous Ta-N-O barriers Cu通过准非晶Ta-N-O势垒的超痕量分析和电学表征

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621084

M. Stavrev, D. Fischer, C. Wenzel, T. Heiser

引用次数: 0

The change of electrical properties of the aluminum-porous silicon contact by thermal annealing 热退火对铝-多孔硅触点电性能的影响

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621101

S. Zimin, E. P. Komarov

引用次数: 0

Solid solution disilicide thin films: formation, structure, properties and application 固溶体二硅酸薄膜:形成、结构、性能及应用

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887575

L. Dvorina

引用次数: 0

Selective TiSi2 by CVD, one step further 通过CVD选择性TiSi2，又进了一步

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887527

D. Maury, J. Regolini

{"title":"Selective TiSi2 by CVD, one step further","authors":"D. Maury, J. Regolini","doi":"10.1109/MAM.1998.887527","DOIUrl":"https://doi.org/10.1109/MAM.1998.887527","url":null,"abstract":"Summary form only given. Some of the problems to be overcome within ULSI technology are those related to the contact metallization over very shallow junctions. The scalability of sub-0.5 /spl mu/m CMOS devices imposes a junction depth of the order of 0.1 to 0.15 /spl mu/m to minimize the short channel effect and punchthrough current. Consequently, active area metallization requirements make it more difficult to use metal silicides, since thin layers are associated with poor contact and sheet resistance. The investigation of contact materials is permanent in order to have a self-aligned contact scheme in the sub-0.5 /spl mu/m regime. TiSi/sub 2/ formed by self-aligned silicide (SALICIDE) technology, has for some considerable time been practically the best candidate due to the low resistivity, good adhesion and thermal stability. Several studies have been published on the application of this technology in ULSI circuits down to design rules of 0.25 /spl mu/m and below. However, some drawbacks are still reported with the standard salicide like substrate consumption, dopant redistribution and film agglomeration which make necessary some complementary steps such as preamorphization by ion implantation or thin metal layer deposition. Using CVD we have already shown several benefits of TiSi/sub 2/ silicidation from the vapor phase. An industrial cluster reactor at reduced pressure and temperature has obtained selective deposition, lower contact resistance and higher saturation current, low sheet resistance on poly bars independently of the line width down to 0.2 /spl mu/m as well as a one step process which increases throughput.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114599378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Application of HF solutions for the cleaning of TiSi2 surface 高频溶液在TiSi2表面清洗中的应用

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887531

M. Baklanov, S. Vanhaelemeersch, K. Maex

引用次数: 0