{"title":"热退火对铝-多孔硅触点电性能的影响","authors":"S. Zimin, E. P. Komarov","doi":"10.1109/MAM.1997.621101","DOIUrl":null,"url":null,"abstract":"The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the Al-PS border by temperature influence.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The change of electrical properties of the aluminum-porous silicon contact by thermal annealing\",\"authors\":\"S. Zimin, E. P. Komarov\",\"doi\":\"10.1109/MAM.1997.621101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the Al-PS border by temperature influence.\",\"PeriodicalId\":302609,\"journal\":{\"name\":\"European Workshop Materials for Advanced Metallization,\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-03-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"European Workshop Materials for Advanced Metallization,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MAM.1997.621101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Workshop Materials for Advanced Metallization,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MAM.1997.621101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The change of electrical properties of the aluminum-porous silicon contact by thermal annealing
The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the Al-PS border by temperature influence.
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