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Multilevel interconnection technologies and future requirements for logic applications 多层互连技术和未来对逻辑应用的要求
European Workshop Materials for Advanced Metallization, Pub Date : 1997-11-01 DOI: 10.1557/PROC-514-29
M. Brillouet
{"title":"Multilevel interconnection technologies and future requirements for logic applications","authors":"M. Brillouet","doi":"10.1557/PROC-514-29","DOIUrl":"https://doi.org/10.1557/PROC-514-29","url":null,"abstract":"As the density of integration of logic functions increases, the performance and cost of the logic ICs is more and more dominated by the interconnection system. While the semiconductor industry was able to stay for a long time with the classical Al/Si0/sub 2/ system, there is a growing trend to move to new interconnect materials.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115248663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Laser reinforcement of polytetrafluorethylene-metal adhesive joints 聚四氟乙烯-金属胶粘接接头的激光增强
European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887558
N. I. Tishkov, N. Fedosenko, S. Chizhik
{"title":"Laser reinforcement of polytetrafluorethylene-metal adhesive joints","authors":"N. I. Tishkov, N. Fedosenko, S. Chizhik","doi":"10.1109/MAM.1998.887558","DOIUrl":"https://doi.org/10.1109/MAM.1998.887558","url":null,"abstract":"Summary form only given, as follows. Adhesion between polytetrafluorethylene (PTFE) and metals is rather poor. In this paper an original method for solving the problem of adhesion between PTFE and copper vacuum deposited film is proposed. This method consists of exposing the adhesive joint from the side of the copper film to pulsed laser emission with alternating duration. The attained adhesive strength of the PTFE-copper joint is comparable with cohesive strength of bulk PTFE. The causes of adhesion strengthening of the joint are discussed on the basis of atomic force microscopy (AFM), SEM, and SIMS. It is probable that reinforcement of the PTFE-copper joint after laser treatment results from pulsed heating of the PTFE boundary layer which is interfaced to copper and activation of the adhesive interaction in the presence of oxygen sorbed by metal. It is supposed that this is a necessary condition for reinforcement of the joint. The data obtained deepen our insight on the adhesive interaction in metal-polymer systems under laser treatment. In practice these results might be used for metallic film soldering on polymeric substrates in microelectronics.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123257536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Patterning of silicide layers by local oxidation 局部氧化形成硅化物层
European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887574
F. Klinkhammer, M. Dolle, S. Mantl
{"title":"Patterning of silicide layers by local oxidation","authors":"F. Klinkhammer, M. Dolle, S. Mantl","doi":"10.1109/MAM.1998.887574","DOIUrl":"https://doi.org/10.1109/MAM.1998.887574","url":null,"abstract":"Recently we have presented a novel method for patterning of silicide layers based on local oxidation. In this contribution we reexamine the physical diffusion model of local oxidation of epitaxial silicide layers and discuss its use for patterning. Oxidation of silicides is an important issue for silicon technology since it allows the formation of metallic interconnects with a protective SiO/sub 2/ coating.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116023353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Rapid thermal low pressure chemical vapor deposition of TiN layers from the TiCI4-NH3-H2 gaseous phase 从TiCI4-NH3-H2气相快速热低压化学气相沉积TiN层
European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887505
A. Bouteville, L. Imhoff, J. Rémy
{"title":"Rapid thermal low pressure chemical vapor deposition of TiN layers from the TiCI4-NH3-H2 gaseous phase","authors":"A. Bouteville, L. Imhoff, J. Rémy","doi":"10.1109/MAM.1998.887505","DOIUrl":"https://doi.org/10.1109/MAM.1998.887505","url":null,"abstract":"Titanium nitride layers have been deposited on silicon substrates by Rapid Thermal Low Pressure Chemical Vapor Deposition from TiC1/sub 4/-NH/sub 3/-H/sub 2/ gaseous phase. Our aim is to better understand the formation of TiN in order to reduce deposition temperature while keeping reasonable resistivity. All the investigations show the importance of the NH/sub 3//TiCl/sub 4/ ratio. Deposition has been first carried out in the temperature range of 700-900/spl deg/C then as low as 500/spl deg/C.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121310693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
What is the metal role on the Fermi-level position at the interface with IV-IV compounds? 金属在与IV-IV化合物界面处的费米能级位置上的作用是什么?
European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621125
V. Aubry-Fortuna, J. Perrossier, M. Mamor, F. Meyer, C. Frojdh, G. Thungstrom, C. Petersson, S. Bodnar, J. Regolini
{"title":"What is the metal role on the Fermi-level position at the interface with IV-IV compounds?","authors":"V. Aubry-Fortuna, J. Perrossier, M. Mamor, F. Meyer, C. Frojdh, G. Thungstrom, C. Petersson, S. Bodnar, J. Regolini","doi":"10.1109/MAM.1997.621125","DOIUrl":"https://doi.org/10.1109/MAM.1997.621125","url":null,"abstract":"The fabrication of IV-IV alloys has generated considerable interest. The possibility of band-gap engineering has made them attractive for devices such as HBTs, MODFETs and also infrared detectors. Recently, it was shown that small amounts of C added to S/sub 1-x/Ge/sub x/ layer can offer the possibility of strain compensation to zero misfit. A tetragonal distortion associated with either a compressive strain (usually present in strained Si/sub 1-x/Ge/sub x/ layer) or a tensile strain is also provided depending on the Ge:C ratio. In this present work, we have investigated the behavior of the Schottky barrier height (SBH) on these IV-IV alloys as a function of the composition of the alloy for different layer thicknesses (above or below the critical thickness), and as a function of the metal used to realize the Schottky contact.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132239829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High crystalline quality titanium silicides on n+p and p+n silicon junctions by sputtering deposition of Ti/Si multilayers and annealing 通过溅射沉积Ti/Si多层膜和退火，在n+p和p+n硅结上制备高结晶质量的硅化钛
European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887560
P. Revva, A. Kastanas, A. Nassiopoulos
{"title":"High crystalline quality titanium silicides on n+p and p+n silicon junctions by sputtering deposition of Ti/Si multilayers and annealing","authors":"P. Revva, A. Kastanas, A. Nassiopoulos","doi":"10.1109/MAM.1998.887560","DOIUrl":"https://doi.org/10.1109/MAM.1998.887560","url":null,"abstract":"In this work, two layers of titanium, 20 nm each and three layers of silicon 40 nm the first and 20 nm the other two, are deposited alternatively using DC and RF sputtering respectively. We have also formed a silicide by deposition of a titanium layer and further annealing so that comparison to be made with the silicide formed using multilayer deposition. The advantage of forming the silicide using multilayer instead of single layer deposition is that a) the base pressure of the deposition system and b) the annealing ambient are not critical for the silicide formation.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130874227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
R.F. magnetron sputtered WTi and WTi-N thin films as diffusion barriers between Cu and Si 磁控溅射WTi和WTi- n薄膜作为Cu和Si之间的扩散屏障
European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621082
H. Ramarotafika, G. Lempérière
{"title":"R.F. magnetron sputtered WTi and WTi-N thin films as diffusion barriers between Cu and Si","authors":"H. Ramarotafika, G. Lempérière","doi":"10.1109/MAM.1997.621082","DOIUrl":"https://doi.org/10.1109/MAM.1997.621082","url":null,"abstract":"Copper is a promising interconnection metal for future VLSI circuits due to its low resistivity and its resistance to electromigration. The aim of this work is to investigate the performance of 100 nm thick WTi and WTi-N films as diffusion barriers between Cu and Si. The barrier films were deposited by RF magnetron sputtering.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129293376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total process of 0.18 and 0.25 /spl mu/m ohmic contacts 总工艺为0.18和0.25 /spl μ /m欧姆接触
European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887529
T. Hara
{"title":"Total process of 0.18 and 0.25 /spl mu/m ohmic contacts","authors":"T. Hara","doi":"10.1109/MAM.1998.887529","DOIUrl":"https://doi.org/10.1109/MAM.1998.887529","url":null,"abstract":"Summary form only given. An increase in contact resistance is a serious problem in 0.18 and 0.25 /spl mu/m ohmic contact processes. There is a lot of interest in the selective W contact, specifically in Japan, although this process is not so useful for ohmic contacts. It has been shown in the literature that contact resistance is inversely proportional to the contact size. However, this resistance is practically proportional to 1/s/sup 4/ or 1/s/sup 5/. This paper describes a total process for ohmic contacts which includes processes such as, ion implantation, oxide etching and sputter deposition.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126342620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TaSiN barrier layer for the oxygen diffusion 氧扩散的TaSiN阻挡层
European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887581
T. Hara, M. Tanaka, T. Kobayashi, T. Kitamura
{"title":"TaSiN barrier layer for the oxygen diffusion","authors":"T. Hara, M. Tanaka, T. Kobayashi, T. Kitamura","doi":"10.1109/MAM.1998.887581","DOIUrl":"https://doi.org/10.1109/MAM.1998.887581","url":null,"abstract":"Barrier layer for the O diffusion is required to form low contact resistance ohmic electrodes and low leakage current charge storage capacitor. In this capacitor, platinum electrode has been extensively used. Out-diffusion of O form dielectric oxide layer during annealing in O/sub 2/ ambient leads the increase of leakage current in the capacitor. Increasing of contact resistance, peeling of the electrodes and the oxidation of Si surface occurred by the diffusion of O through the Pt/TiN/Si lower electrode are serious problem. However, few papers have studied the barrier layer for O diffusion. We have reported that layer properties can be changed with composition. However, the control of Si composition is the most promising in this application of TaSiN layer. This paper describes the barrier properties of the O diffusion in TaSiN layer with different Si compositions.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131338100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2 and Si 注入As、BF2和Si的多晶硅上CoSi2薄层的热稳定性
European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621112
F. La Via, A. Aberti, V. Raineri, S. Ravesi, E. Rimini
{"title":"Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2 and Si","authors":"F. La Via, A. Aberti, V. Raineri, S. Ravesi, E. Rimini","doi":"10.1109/MAM.1997.621112","DOIUrl":"https://doi.org/10.1109/MAM.1997.621112","url":null,"abstract":"In this paper we studied the influence of the dopant and of the polysilicon substrate on the thermal stability of a thin CoSi/sub 2/ layer. To distinguish between the influence of the dopant (As or B) and the effect of the implant in the silicon substrate, also an implantation of silicon was performed on a different sample. A large difference in the silicide thermal stability has been observed and this behavior has been explained with the crystallographic orientation of the underlying silicon substrate and of the silicide layer.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124575958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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