TaSiN barrier layer for the oxygen diffusion

Abstract

Barrier layer for the O diffusion is required to form low contact resistance ohmic electrodes and low leakage current charge storage capacitor. In this capacitor, platinum electrode has been extensively used. Out-diffusion of O form dielectric oxide layer during annealing in O/sub 2/ ambient leads the increase of leakage current in the capacitor. Increasing of contact resistance, peeling of the electrodes and the oxidation of Si surface occurred by the diffusion of O through the Pt/TiN/Si lower electrode are serious problem. However, few papers have studied the barrier layer for O diffusion. We have reported that layer properties can be changed with composition. However, the control of Si composition is the most promising in this application of TaSiN layer. This paper describes the barrier properties of the O diffusion in TaSiN layer with different Si compositions.