{"title":"局部氧化形成硅化物层","authors":"F. Klinkhammer, M. Dolle, S. Mantl","doi":"10.1109/MAM.1998.887574","DOIUrl":null,"url":null,"abstract":"Recently we have presented a novel method for patterning of silicide layers based on local oxidation. In this contribution we reexamine the physical diffusion model of local oxidation of epitaxial silicide layers and discuss its use for patterning. Oxidation of silicides is an important issue for silicon technology since it allows the formation of metallic interconnects with a protective SiO/sub 2/ coating.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Patterning of silicide layers by local oxidation\",\"authors\":\"F. Klinkhammer, M. Dolle, S. Mantl\",\"doi\":\"10.1109/MAM.1998.887574\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently we have presented a novel method for patterning of silicide layers based on local oxidation. In this contribution we reexamine the physical diffusion model of local oxidation of epitaxial silicide layers and discuss its use for patterning. Oxidation of silicides is an important issue for silicon technology since it allows the formation of metallic interconnects with a protective SiO/sub 2/ coating.\",\"PeriodicalId\":302609,\"journal\":{\"name\":\"European Workshop Materials for Advanced Metallization,\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-03-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"European Workshop Materials for Advanced Metallization,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MAM.1998.887574\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Workshop Materials for Advanced Metallization,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MAM.1998.887574","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recently we have presented a novel method for patterning of silicide layers based on local oxidation. In this contribution we reexamine the physical diffusion model of local oxidation of epitaxial silicide layers and discuss its use for patterning. Oxidation of silicides is an important issue for silicon technology since it allows the formation of metallic interconnects with a protective SiO/sub 2/ coating.
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