R.F. magnetron sputtered WTi and WTi-N thin films as diffusion barriers between Cu and Si

Abstract

Copper is a promising interconnection metal for future VLSI circuits due to its low resistivity and its resistance to electromigration. The aim of this work is to investigate the performance of 100 nm thick WTi and WTi-N films as diffusion barriers between Cu and Si. The barrier films were deposited by RF magnetron sputtering.