High crystalline quality titanium silicides on n+p and p+n silicon junctions by sputtering deposition of Ti/Si multilayers and annealing

Abstract

In this work, two layers of titanium, 20 nm each and three layers of silicon 40 nm the first and 20 nm the other two, are deposited alternatively using DC and RF sputtering respectively. We have also formed a silicide by deposition of a titanium layer and further annealing so that comparison to be made with the silicide formed using multilayer deposition. The advantage of forming the silicide using multilayer instead of single layer deposition is that a) the base pressure of the deposition system and b) the annealing ambient are not critical for the silicide formation.