磁控溅射WTi和WTi- n薄膜作为Cu和Si之间的扩散屏障

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI:10.1109/MAM.1997.621082

H. Ramarotafika, G. Lempérière

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引用次数: 1

摘要

铜由于其低电阻率和抗电迁移性，是未来超大规模集成电路中很有前途的互连金属。本研究的目的是研究100 nm厚WTi和WTi- n薄膜作为Cu和Si之间扩散屏障的性能。利用射频磁控溅射技术制备了阻挡膜。

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R.F. magnetron sputtered WTi and WTi-N thin films as diffusion barriers between Cu and Si

Copper is a promising interconnection metal for future VLSI circuits due to its low resistivity and its resistance to electromigration. The aim of this work is to investigate the performance of 100 nm thick WTi and WTi-N films as diffusion barriers between Cu and Si. The barrier films were deposited by RF magnetron sputtering.

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European Workshop Materials for Advanced Metallization,

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