Total process of 0.18 and 0.25 /spl mu/m ohmic contacts

Abstract

Summary form only given. An increase in contact resistance is a serious problem in 0.18 and 0.25 /spl mu/m ohmic contact processes. There is a lot of interest in the selective W contact, specifically in Japan, although this process is not so useful for ohmic contacts. It has been shown in the literature that contact resistance is inversely proportional to the contact size. However, this resistance is practically proportional to 1/s/sup 4/ or 1/s/sup 5/. This paper describes a total process for ohmic contacts which includes processes such as, ion implantation, oxide etching and sputter deposition.