发布求助
文献互助 智能选刊 最新文献

European Workshop Materials for Advanced Metallization,最新文献

筛选
英文 中文
Planar aluminiurn multilevel interconnection formed by electrochemical anodizing technique 电化学阳极氧化技术形成的平面铝缸多层互连
European Workshop Materials for Advanced Metallization, Pub Date : 1900-01-01 DOI: 10.1109/MAM.1997.621070
V. Surganov, A. Mozalev
{"title":"Planar aluminiurn multilevel interconnection formed by electrochemical anodizing technique","authors":"V. Surganov, A. Mozalev","doi":"10.1109/MAM.1997.621070","DOIUrl":"https://doi.org/10.1109/MAM.1997.621070","url":null,"abstract":"This report describes a multilevel inter-connection technology based on selective electrochemical anodizing of aluminium and its alloys. In accordance with this technology, local areas into Al layer are transformed to insulating anodic alumina by low temperature electrochemical oxidation. Selective anodizing technique provides possibility to produce following components of planar multilevel inter-connections.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117260878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dry etch challenges of 0.25 /spl mu/m dual damascene structures 干蚀刻挑战0.25 /spl亩/米双大马士革结构
European Workshop Materials for Advanced Metallization, Pub Date : 1900-01-01 DOI: 10.1109/mam.1997.621074
R. Schnabel, D. Dobuzinski, F. Wang, D. Perng, J. Gambiono, H. Palm
{"title":"Dry etch challenges of 0.25 /spl mu/m dual damascene structures","authors":"R. Schnabel, D. Dobuzinski, F. Wang, D. Perng, J. Gambiono, H. Palm","doi":"10.1109/mam.1997.621074","DOIUrl":"https://doi.org/10.1109/mam.1997.621074","url":null,"abstract":"Interconnects for integrated circuits are generally formed by reactive ion etching (RIE) of the metal stack. However, this process is susceptible to shorts between neighboring lines due to either incomplete etching of the stack or electrically conducting etch by products. As a result, there has been much recent interest in using damascene processes (where chemical-mechanical polishing (CMP) is used to form the metal lines) to fabricate interconnects at dimensions of 0.25 /spl mu/m and less. The damascene process has a number of benefits; the lines are defined by oxide RIE, which is considerably simpler than RIE of a multilayer metal stack. The metal CMP process provides a nearly planar surface, eliminating the need for good gap fill by the interlevel dielectrics. Finally, the metal fill of the interconnects and vias can be combined into one step (i.e. dual damascene), resulting in reduced cost.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123849502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modification of Al-based metallization for improved surface morphology 改善表面形貌的铝基金属化改性
European Workshop Materials for Advanced Metallization, Pub Date : 1900-01-01 DOI: 10.1109/mam.1997.621089
M. Zaborowski, A. Barcz
{"title":"Modification of Al-based metallization for improved surface morphology","authors":"M. Zaborowski, A. Barcz","doi":"10.1109/mam.1997.621089","DOIUrl":"https://doi.org/10.1109/mam.1997.621089","url":null,"abstract":"Aluminum and some of its alloys are commonly used as metallization for silicon integrated circuits. Due to miniaturization, the critical dimensions of metallization such as line width, contact or via area in ULSI devices, are now approaching the size of a grain in the polycrystalline Al film. Particularly unwanted are hillocks i.e. large grains that outgrow above the initial Al surface. It is generally accepted that hillock growth is related to plastic flow and grain boundary diffusion where the supply of atoms takes place at the bottom of the hillock. The aim of this work is to investigate the possibilities of reduction of the density and/or the size of the hillocks by introducing into the metallization adequate barriers suppressing the grain boundary diffusion.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"102-103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124011555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of carrier gas on Cu nucleation, film properties and MOCVD reaction kinetics 载气对Cu成核、膜性质及MOCVD反应动力学的影响
European Workshop Materials for Advanced Metallization, Pub Date : 1900-01-01 DOI: 10.1109/mam.1998.887499
J. Rober, S. Riedel, S. Schulz, T. Gessner
{"title":"Influence of carrier gas on Cu nucleation, film properties and MOCVD reaction kinetics","authors":"J. Rober, S. Riedel, S. Schulz, T. Gessner","doi":"10.1109/mam.1998.887499","DOIUrl":"https://doi.org/10.1109/mam.1998.887499","url":null,"abstract":"Copper CVD has been investigated for a few years as a key process for copper metallization technology among others because of its capability for high step coverage and low process temperatures. Beside low resistivity a high film growth rate, along with strong adhesion of the Cu film to the underlayer are essential for practical use in fabrication line. This paper presents the effect of carrier gas and precursor composition on the characteristics of copper MOCVD using the Cu(hfac)TMVS precursor.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122296068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
WNx/W as a low-resistance gate material and local interconnect WNx/W作为低阻栅极材料和局部互连
European Workshop Materials for Advanced Metallization, Pub Date : 1900-01-01 DOI: 10.1109/mam.1997.621069
C. Galewski, P. Gadgil, L. Matthysse, C. Sans
{"title":"WNx/W as a low-resistance gate material and local interconnect","authors":"C. Galewski, P. Gadgil, L. Matthysse, C. Sans","doi":"10.1109/mam.1997.621069","DOIUrl":"https://doi.org/10.1109/mam.1997.621069","url":null,"abstract":"In this study we propose the use of an in-situ deposition of an interfacial WN, film to enable the use of W as a low resistance gate and local interconnect layer. We have found that the interfacial WN, layer greatly improves the adhesion and nucleation of the following W deposition. Furthermore, the interfacial WN, stabilizes the W to Si interface. preventing any silicide formation during anneals up to 850OC. The effect of the WN, interface layer was investigated by using a process split as shown infigure 1. The depositions were performed in the same process module with only a change in the recipe to either include, or exclude, the WN, deposition step. The composition of the WN, film was WNO and the thickness range investigated was from 50 to 200 A. Sheet resistance of the composite WN,N film is in the range of 1 to 2 ohms/square, depending on the thickness of WN, used.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125531854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信