European Workshop Materials for Advanced Metallization,最新文献_第2页

Zirconium diboride low resistance layers 二硼化锆低阻层

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621129

A. Andreeva, V. Statsenko, L.A. Klatchkov

引用次数: 1

Deposition of barrier layer and CVD copper under no exposed wafer conditions: adhesion performance and process integration 在不暴露晶圆条件下沉积阻挡层和CVD铜:粘附性能和工艺集成

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887500

G. Braeckelmann, D. Manger, S. Seo, S. Beasor, S. Nijsten, A. Kaloyeros

引用次数: 2

Investigation of chemical interactions on the interface W/Si(100) during the deposition of W thin films by various techniques 不同工艺沉积W薄膜过程中W/Si(100)界面化学相互作用的研究

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621109

S.V. Pluscheva, L.G. Shabelinikov, I. V. Malikov, A. Andreeva

引用次数: 0

Reaction sequence of thin ni films with [001] 3C-SiC ni薄膜与[001]3C-SiC的反应顺序

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621116

S. Gasser, A. Bachli, E. Kolawa, M. Nicolet

{"title":"Reaction sequence of thin ni films with [001] 3C-SiC","authors":"S. Gasser, A. Bachli, E. Kolawa, M. Nicolet","doi":"10.1109/MAM.1997.621116","DOIUrl":"https://doi.org/10.1109/MAM.1997.621116","url":null,"abstract":"Summary form only given, as follows. Nickel is frequently used as a contact to SiC. We investigate the reaction sequence between Ni and cubic SiC at annealing temperatures between 400/spl deg/C and 700/spl deg/C in vacuum. The films are analyzed by 3.2 MeV /sup 4/He/sup ++/ backscattering spectrometry and secondary ion mass spectrometry to determine elemental depth profiles, X-ray diffraction to characterize reaction compounds, and cross sectional transmission electron microscopy to visualize the microstructure of the reacted layer. We find that a reaction starts after annealing at 450/spl deg/C for 30 min with an outdiffusion of carbon through the nickel layer up to the surface where it remains stable during additional annealing. The same annealing temperature leads to interdiffusion of Ni and Si with formation of the Ni/sub 3/Si phase. Ni/sub 31/Si/sub 12/ starts to form at 450/spl deg/C after annealing during 120 min, and it is the only detected phase in the sample annealed at 500/spl deg/C. The Ni/sub 2/Si phase, which is the thermodynamically stable phase with SiC together with elemental C, starts to grow down from the surface toward the SiC at 600/spl deg/C, and about half of the previous layer is consumed after 30 min. After the 700/spl deg/C/30 min anneal only this phase can be detected. At this stage, the carbon distribution still shows an accumulation on the surface, followed by a concentration sink underneath and an almost constant distribution through, most of the remaining depth of Ni/sub 2/Si down to the interface. In terms of the microstructure the film shows two major distinct layers, an upper part with very fine structure, and a lower part of distinctly columnar structure.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132597854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

W CMP process integration wcmp流程集成

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621068

E. Sicurani, M. Fayolle, Y. Gobil, Y. Morand

引用次数: 0

Copper CMP evaluation: slurry chemical effect on planarization 铜的CMP评价:浆料化学效应对刨平的影响

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887502

F. Romagna, M. Fayolle

引用次数: 2

Band structure and transport properties of semiconducting rhenium silicide thin films grown epitaxially on silicon 硅外延生长硅化铼半导体薄膜的能带结构和输运性质

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887576

P. Muret, I. Ali, T.T.A. Nguyen

{"title":"Band structure and transport properties of semiconducting rhenium silicide thin films grown epitaxially on silicon","authors":"P. Muret, I. Ali, T.T.A. Nguyen","doi":"10.1109/MAM.1998.887576","DOIUrl":"https://doi.org/10.1109/MAM.1998.887576","url":null,"abstract":"Summary form only given, as follows. Transport properties of semiconducting rhenium silicide thin films have been measured, in directions both parallel and perpendicular to the silicon substrate. Optical properties are also reassessed. This silicide, which shows a commensurable fit with the (111) surface of silicon, has been epitaxially grown on such substrates by reactive deposition at 650/spl deg/C of the simultaneous flux of rhenium and silicon atoms coming from two sublimation cells. Post-anneals at 750/spl deg/C and 850/spl deg/C in hydrogen partial pressure have been done. From Hall effect measurements, the semiconducting silicide appears as p-type in the first case and n-type in the second case, with a lower concentration of residual doping. But in any case, the intrinsic regime is almost reached near room temperature, in agreement with the band gap deduced from optical absorption measurements. The band gap is also found as the difference between the two transition thresholds observed in the internal photoemission response, evaluated from the photocurrent induced by illumination in the silicide-silicon heterojunction. Band discontinuities with silicon are also deduced. Conductivity and Hall effect measurements on high resistivity silicon substrates show that the electron mobility is at least 200 cm2/Vs at ambient temperature and in excess of 1000 cm/sup 2//Vs at the liquid nitrogen temperature. These facts indicate that the rhenium silicide thin film quality has been dramatically improved by the aforementioned thermal treatment and may be used in photodetector devices in the infrared range up to wavelengths near 5 /spl mu/m with the inherent advantage of its compatibility with silicon technology.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127485526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Optimized indium oxide films prepared by DC magnetron sputtering 优化了直流磁控溅射法制备氧化铟薄膜

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621102

A. Axelevitch, E. Rabinovitch, G. Golan

引用次数: 0

Properties of tungsten silicide thin films obtained by magnetron sputtering of composite cast targets 磁控溅射制备硅化钨薄膜的性能

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1998.887562

V. Glebovsky, S. N. Ermolov, V. N. Motuzenko, E.D. Shfinov

{"title":"Properties of tungsten silicide thin films obtained by magnetron sputtering of composite cast targets","authors":"V. Glebovsky, S. N. Ermolov, V. N. Motuzenko, E.D. Shfinov","doi":"10.1109/MAM.1998.887562","DOIUrl":"https://doi.org/10.1109/MAM.1998.887562","url":null,"abstract":"Summary form only given. The standard technique of deposition of thin films, having the silicide composition and structure, involves magnetron sputtering of a pure metal film onto the surface of a silicon substrate and then high-temperature annealing. Deposition of thin films by magnetron sputtering of compacted silicide powder targets is of limited use because of the high content of gaseous and light metallic impurities stipulated by standard powder metallurgy processes. Thin silicide films deposited by sputtering such targets have high electrical resistivity and comparatively low reproducibility. A more advantageous procedure is deposition of silicide films by magnetron sputtering cast silicide targets of the necessary chemical composition. However, the casting of silicide targets for commercial magnetron sputtering is a well-known metallurgical problem because solidified tungsten silicides are very brittle. It seems that the optimal solution of this problem, which enables one to produce cast silicide sputtering targets, is mosaic targets consisting of copper bases and small cast silicide ingots attached to the base by soldering or another procedure. In this study we present our experimental results on the thin tungsten silicide films deposited by magnetron sputtering of mosaic cast tungsten disilicide targets. The cast tungsten disilicide ingots have been produced from 5N-purity silicon and high-purity tungsten.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116768305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

TIN/W double layers as a barrier system for use in Cu metalization TIN/W双层阻挡层在Cu金属化中的应用

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI: 10.1109/MAM.1997.621086

J. Baumann, M. Markert, T. Werner, M. Rennau, C. Kaufmann, T. Gessner

引用次数: 0