S.V. Pluscheva, L.G. Shabelinikov, I. V. Malikov, A. Andreeva
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Investigation of chemical interactions on the interface W/Si(100) during the deposition of W thin films by various techniques
The interaction processes on W/Si(100) interface when obtaining the W films by means of CVD from a tungsten hexa-fluoride-hydrogen mixture with different ways of activation of reaction products were studied. The influence of thermal treatment on film composition, electrical resistivity, and internal deformations was analysed. Comparative investigation of the CVD-processes in a low pressure reactor by two methods: 1) thermal CVD (activation energy of process 16.8 kkal/mole); 2) plasma-enhanced CVD (activation energy is 3.8 kkal/mole) was carried out.
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