{"title":"硅外延生长硅化铼半导体薄膜的能带结构和输运性质","authors":"P. Muret, I. Ali, T.T.A. Nguyen","doi":"10.1109/MAM.1998.887576","DOIUrl":null,"url":null,"abstract":"Summary form only given, as follows. Transport properties of semiconducting rhenium silicide thin films have been measured, in directions both parallel and perpendicular to the silicon substrate. Optical properties are also reassessed. This silicide, which shows a commensurable fit with the (111) surface of silicon, has been epitaxially grown on such substrates by reactive deposition at 650/spl deg/C of the simultaneous flux of rhenium and silicon atoms coming from two sublimation cells. Post-anneals at 750/spl deg/C and 850/spl deg/C in hydrogen partial pressure have been done. From Hall effect measurements, the semiconducting silicide appears as p-type in the first case and n-type in the second case, with a lower concentration of residual doping. But in any case, the intrinsic regime is almost reached near room temperature, in agreement with the band gap deduced from optical absorption measurements. The band gap is also found as the difference between the two transition thresholds observed in the internal photoemission response, evaluated from the photocurrent induced by illumination in the silicide-silicon heterojunction. Band discontinuities with silicon are also deduced. Conductivity and Hall effect measurements on high resistivity silicon substrates show that the electron mobility is at least 200 cm2/Vs at ambient temperature and in excess of 1000 cm/sup 2//Vs at the liquid nitrogen temperature. These facts indicate that the rhenium silicide thin film quality has been dramatically improved by the aforementioned thermal treatment and may be used in photodetector devices in the infrared range up to wavelengths near 5 /spl mu/m with the inherent advantage of its compatibility with silicon technology.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Band structure and transport properties of semiconducting rhenium silicide thin films grown epitaxially on silicon\",\"authors\":\"P. Muret, I. Ali, T.T.A. Nguyen\",\"doi\":\"10.1109/MAM.1998.887576\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given, as follows. Transport properties of semiconducting rhenium silicide thin films have been measured, in directions both parallel and perpendicular to the silicon substrate. Optical properties are also reassessed. This silicide, which shows a commensurable fit with the (111) surface of silicon, has been epitaxially grown on such substrates by reactive deposition at 650/spl deg/C of the simultaneous flux of rhenium and silicon atoms coming from two sublimation cells. Post-anneals at 750/spl deg/C and 850/spl deg/C in hydrogen partial pressure have been done. From Hall effect measurements, the semiconducting silicide appears as p-type in the first case and n-type in the second case, with a lower concentration of residual doping. But in any case, the intrinsic regime is almost reached near room temperature, in agreement with the band gap deduced from optical absorption measurements. The band gap is also found as the difference between the two transition thresholds observed in the internal photoemission response, evaluated from the photocurrent induced by illumination in the silicide-silicon heterojunction. Band discontinuities with silicon are also deduced. Conductivity and Hall effect measurements on high resistivity silicon substrates show that the electron mobility is at least 200 cm2/Vs at ambient temperature and in excess of 1000 cm/sup 2//Vs at the liquid nitrogen temperature. These facts indicate that the rhenium silicide thin film quality has been dramatically improved by the aforementioned thermal treatment and may be used in photodetector devices in the infrared range up to wavelengths near 5 /spl mu/m with the inherent advantage of its compatibility with silicon technology.\",\"PeriodicalId\":302609,\"journal\":{\"name\":\"European Workshop Materials for Advanced Metallization,\",\"volume\":\"2016 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-03-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"European Workshop Materials for Advanced Metallization,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MAM.1998.887576\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Workshop Materials for Advanced Metallization,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MAM.1998.887576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
仅给出摘要形式,如下。测量了半导体硅化铼薄膜在平行和垂直于硅衬底方向上的输运特性。光学性质也被重新评估。这种硅化物与硅的(111)表面具有相当的契合度,通过反应沉积在650/spl°C的衬底上生长,同时来自两个升华电池的铼和硅原子的通量。在氢分压750和850下进行了后退火。从霍尔效应测量来看,半导体硅化物在第一种情况下表现为p型,在第二种情况下表现为n型,残留掺杂浓度较低。但在任何情况下,本征状态几乎达到室温附近,与从光学吸收测量推断出的带隙一致。带隙也被认为是在内部光发射响应中观察到的两个跃迁阈值之间的差异,从硅-硅异质结中照明引起的光电流来评估。还推导出了硅带的不连续。在高电阻率硅衬底上的电导率和霍尔效应测量表明,在环境温度下,电子迁移率至少为200 cm2/Vs,在液氮温度下,电子迁移率超过1000 cm/sup /Vs。这些事实表明,经过上述热处理,硅化铼薄膜的质量得到了显著改善,并且具有与硅技术兼容的固有优势,可用于红外范围内的光电探测器器件,波长接近5 /spl μ m /m。
Band structure and transport properties of semiconducting rhenium silicide thin films grown epitaxially on silicon
Summary form only given, as follows. Transport properties of semiconducting rhenium silicide thin films have been measured, in directions both parallel and perpendicular to the silicon substrate. Optical properties are also reassessed. This silicide, which shows a commensurable fit with the (111) surface of silicon, has been epitaxially grown on such substrates by reactive deposition at 650/spl deg/C of the simultaneous flux of rhenium and silicon atoms coming from two sublimation cells. Post-anneals at 750/spl deg/C and 850/spl deg/C in hydrogen partial pressure have been done. From Hall effect measurements, the semiconducting silicide appears as p-type in the first case and n-type in the second case, with a lower concentration of residual doping. But in any case, the intrinsic regime is almost reached near room temperature, in agreement with the band gap deduced from optical absorption measurements. The band gap is also found as the difference between the two transition thresholds observed in the internal photoemission response, evaluated from the photocurrent induced by illumination in the silicide-silicon heterojunction. Band discontinuities with silicon are also deduced. Conductivity and Hall effect measurements on high resistivity silicon substrates show that the electron mobility is at least 200 cm2/Vs at ambient temperature and in excess of 1000 cm/sup 2//Vs at the liquid nitrogen temperature. These facts indicate that the rhenium silicide thin film quality has been dramatically improved by the aforementioned thermal treatment and may be used in photodetector devices in the infrared range up to wavelengths near 5 /spl mu/m with the inherent advantage of its compatibility with silicon technology.