{"title":"wcmp流程集成","authors":"E. Sicurani, M. Fayolle, Y. Gobil, Y. Morand","doi":"10.1109/MAM.1997.621068","DOIUrl":null,"url":null,"abstract":"As integrated circuit devices continue to scale towards smaller geometry, the requirements imposed on the advanced metallization become increasingly stringent: high degree of planarity, low defectivity level, high device yield. Since etch back tungsten introduces many particles and recess, tungsten CMP appears as a very promising technology for new generation of ULSI devices. This work reports a characterisation of W CMP process using different slurries.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"W CMP process integration\",\"authors\":\"E. Sicurani, M. Fayolle, Y. Gobil, Y. Morand\",\"doi\":\"10.1109/MAM.1997.621068\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As integrated circuit devices continue to scale towards smaller geometry, the requirements imposed on the advanced metallization become increasingly stringent: high degree of planarity, low defectivity level, high device yield. Since etch back tungsten introduces many particles and recess, tungsten CMP appears as a very promising technology for new generation of ULSI devices. This work reports a characterisation of W CMP process using different slurries.\",\"PeriodicalId\":302609,\"journal\":{\"name\":\"European Workshop Materials for Advanced Metallization,\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-03-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"European Workshop Materials for Advanced Metallization,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MAM.1997.621068\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Workshop Materials for Advanced Metallization,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MAM.1997.621068","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
As integrated circuit devices continue to scale towards smaller geometry, the requirements imposed on the advanced metallization become increasingly stringent: high degree of planarity, low defectivity level, high device yield. Since etch back tungsten introduces many particles and recess, tungsten CMP appears as a very promising technology for new generation of ULSI devices. This work reports a characterisation of W CMP process using different slurries.
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