{"title":"固溶体二硅酸薄膜:形成、结构、性能及应用","authors":"L. Dvorina","doi":"10.1109/MAM.1998.887575","DOIUrl":null,"url":null,"abstract":"The mechanism of solid phase interaction of transition metals with silicon in quasibinary systems CrSi/sub 2/-MeSi/sub 2/ (Me-Ti,Ta,Mo, and other) for film structures was examined. The Cr-Me-Si layers have been prepared by sputtering from solid solution disilicide targets, produced by the method of powder metallurgy on vacuum technology. The methods of electronography, in situ measurements of electrical resistance, elevation of the annealing temperature are used to establish regularities in formation of films of the studied disilicide solid solution. The sample composition was determined using Auger electron spectroscopy.","PeriodicalId":302609,"journal":{"name":"European Workshop Materials for Advanced Metallization,","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Solid solution disilicide thin films: formation, structure, properties and application\",\"authors\":\"L. Dvorina\",\"doi\":\"10.1109/MAM.1998.887575\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mechanism of solid phase interaction of transition metals with silicon in quasibinary systems CrSi/sub 2/-MeSi/sub 2/ (Me-Ti,Ta,Mo, and other) for film structures was examined. The Cr-Me-Si layers have been prepared by sputtering from solid solution disilicide targets, produced by the method of powder metallurgy on vacuum technology. The methods of electronography, in situ measurements of electrical resistance, elevation of the annealing temperature are used to establish regularities in formation of films of the studied disilicide solid solution. The sample composition was determined using Auger electron spectroscopy.\",\"PeriodicalId\":302609,\"journal\":{\"name\":\"European Workshop Materials for Advanced Metallization,\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-03-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"European Workshop Materials for Advanced Metallization,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MAM.1998.887575\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Workshop Materials for Advanced Metallization,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MAM.1998.887575","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Solid solution disilicide thin films: formation, structure, properties and application
The mechanism of solid phase interaction of transition metals with silicon in quasibinary systems CrSi/sub 2/-MeSi/sub 2/ (Me-Ti,Ta,Mo, and other) for film structures was examined. The Cr-Me-Si layers have been prepared by sputtering from solid solution disilicide targets, produced by the method of powder metallurgy on vacuum technology. The methods of electronography, in situ measurements of electrical resistance, elevation of the annealing temperature are used to establish regularities in formation of films of the studied disilicide solid solution. The sample composition was determined using Auger electron spectroscopy.
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