低功率磁控溅射沉积TiN薄膜

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI:10.1109/MAM.1997.621094

P.V. Mikhal'chuk, A. Orlikovsky, A. G. Vasiliev, O. Lebedev, D. Zakharov

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引用次数: 0

摘要

在这项工作中，我们研究了在亚临界氮压力下TiN薄膜的低功率反应磁控溅射(LPRMS)。重点介绍了这些层的结构和电物理性质，作为势垒和VLSI互连应用的候选材料。

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Deposition of thin TiN films by low-power reactive magnetron sputtering

In this work, we present the study of low-power reactive magnetron sputtering (LPRMS) of TiN films at subcritical nitrogen pressures. Emphasis was given to the structural and electrophysical properties of the layers as candidates for barrier and VLSI interconnection applications.

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European Workshop Materials for Advanced Metallization,

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