用快闪记忆电池作为电荷传感器的金属蚀刻器特性

European Workshop Materials for Advanced Metallization, Pub Date : 1997-03-16 DOI:10.1109/MAM.1998.887550

S. Alba, A. Colognese, E. Ghio

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引用次数: 0

摘要

在这项工作中，0.5 /spl mu/m技术的闪存单元已被用作电荷传感器来表征变压器耦合等离子体(TCP)金属蚀刻器。该方法的原理类似于CHARM硅片的原理。

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Metal etcher characterization using flash memory cells as charge sensors

In this work, flash memory cells in 0.5 /spl mu/m technology have been used as charge sensors to characterize a Transformer Coupled Plasma (TCP) metal etcher. The philosophy of the method is analogous to that of CHARM wafers.

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European Workshop Materials for Advanced Metallization,

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