YBCO/CoSi2/Si结构中CoSi2缓冲层中硅化物相的局部成核和侧向结晶

I. Belousov, E. Rudenko, S. Linzen, P. Seidel
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引用次数: 1

摘要

金属二硅化钴(CoSi/sub 2/)与Si的晶格失配度仅为1.2%,与YBCO的晶格失配度为1.5%,YBCO和Si之间的热膨胀系数为9.4/spl,中间点/10/sup -6/ K/sup -1/,电阻率低,可以作为与n型和p型Si的低电阻欧姆接触材料,可能是基于YBCO和硅的多层结构的一个非常有趣的组成部分。研究了硅化钴相的局部成核、横向晶体生长和团聚现象,重点研究了硅化钴层表面粗糙度和针孔形成的可能原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Local nucleation and lateral crystallisation of the silicide phases in CoSi2 buffer layer of YBCO/CoSi2/Si structure
The metallic cobalt disilicide (CoSi/sub 2/) with a lattice mismatch to Si of only 1.2% and l.5% to YBCO, a thermal expansion coefficient (9.4/spl middot/10/sup -6/ K/sup -1/ between YBCO and Si, low electrical resistivity and as a material for low-resistance ohmic contact to n- and p-type Si could be a very interesting component of multilayer structure based on YBCO and silicon. Phenomena of the local nucleation, lateral crystal growth and agglomeration of cobalt silicide phases have been investigated with emphasis an a possible cause of the surface roughness and pinholes of the silicide layer.
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