HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)最新文献_第2页

High temperature silicon-on-insulator pressure sensor technology 高温绝缘体上硅压力传感器技术

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827460

R.L. Johnson

{"title":"High temperature silicon-on-insulator pressure sensor technology","authors":"R.L. Johnson","doi":"10.1109/HITEN.1999.827460","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827460","url":null,"abstract":"In this paper the recent development of a high sensitivity high temperature Silicon-On-Insulator (SOI) piezoresistive sensor technology that provides pressure sensing, temperature sensing, and feedback and bias resistor networks all integrated on a single miniature chip that measures only 0.23 cm software (90 mils square) is reported. This advanced sensor technology also provides sheet resistivities of approximated 3 times greater than conventional bulk silicon sensors while maintaining the same dopant concentration of the p-type resistor elements. The new chip design features a high impedance 30 K/spl Omega/ pressure bridge which provides a full scale output of 200 milli-volt per volt of excitation. This corresponds to a /spl Delta/R/R gage factor of 0.20. Also featured is a high impedance 60 K/spl Omega/ temperature bridge with an output sensitivity of 1.2 milli-volt per /spl deg/C per volt of excitation. This high temperature SOI sensor technology complements Honeywell's HTMOS high temperature electronics product line which provides both analog devices (including quad amplifiers and switches, fluxes, A/D's, and voltage references) and digital devices (including SRAMs, microcontrollers and clock generators) with operation up to 300/spl deg/C. This dual capability of high temperature sensors and high temperature electronics provides all the required functional blocks needed for designing complete sensor systems for an array of high temperature applications.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130686001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Diffusions barrier, an important layer for high temperature bonds 扩散屏障是高温键的重要层

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827489

J. Wagner, A. Dommann

引用次数: 0

Packaging and thermomechanical challenges for high temperature electronics 高温电子产品的包装和热机械挑战

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827463

B. Michel, D. Vogel

{"title":"Packaging and thermomechanical challenges for high temperature electronics","authors":"B. Michel, D. Vogel","doi":"10.1109/HITEN.1999.827463","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827463","url":null,"abstract":"Summary form only given. The development of new solutions for high temperature applications in the field of automotive electronics has become very important in recent years. However, it has been known to constitute a very complicated area of research. Serious troubles are connected with the thermal misfit problems. In electronic packaging for automotive electronics, various problems have to be solved. Due to the thermomechanical behaviour of solder joints, new packaging strategies are required (e.g. chip scale package, /spl mu/BGA and flip chip interconnection). The classical tin-lead solders have to be removed. Another problem is the \"polymeric material problem\". The creep behaviour in high temperature regions leads to a very complicated material behaviour which required new steps for advanced measures in the design and testing processes. The authors present their experience in the field of reliability analysis in automotive electronics and microsystems technology applications (e.g. airbag sensors) taking into account both simulation and experiments mainly in the field of automotive sensors and packaging for high temperature applications. In addition, the problem of CTE measurement by the new microDAC method in high temperature automotive electronics is discussed.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116667966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Process technology and high temperature performance of 6H-SiC MOS devices 6H-SiC MOS器件的工艺技术及高温性能

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827495

U. Schmid, W. Wondrak

引用次数: 2

The influence of the Hall scattering factor on the determination of activation energies of the nitrogen donors in 4H-SiC epitaxial layers 霍尔散射系数对4H-SiC外延层氮给体活化能测定的影响

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827494

G. Rutsch, R. Devaty, W.J. Chovke

{"title":"The influence of the Hall scattering factor on the determination of activation energies of the nitrogen donors in 4H-SiC epitaxial layers","authors":"G. Rutsch, R. Devaty, W.J. Chovke","doi":"10.1109/HITEN.1999.827494","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827494","url":null,"abstract":"In 4H-SiC, the most common donor impurity, nitrogen, is not always completely ionized at room temperature, so its activation energy can have a direct impact on device characteristics. Values of the activation energies of the nitrogen donors in SiC as determined by Hall effect measurements are frequently higher than values determined by optical measurements which should give a maximum value. The Hall scattering factor r/sub H/ can skew activation energies if one uses the common approximation r/sub H/=1, so an investigation of this quantity was undertaken. r/sub H/ can be measured if magnetic fields larger an 1//spl mu//sub D/ are available where /spl mu//sub D/ is the electron drift mobility. The Hall scattering factor was measured on four 4H-SiC epitaxial layers at the National High Field Magnet Lab (NHMFL) in Tallahassee, Florida, USA with magnetic fields of up to 30 T. Nitrogen donor activation energies extracted from carrier concentration data corrected with Hall scattering factor information are within experimental error equal to these. The correction is not significant and cannot account for the experimental difference between electrical and optical data. Details of the procedure for extracting activation energies are presented.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"700 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115019113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Relationships between radiation tolerant and high temperature electronics 耐辐射与高温电子学之间的关系

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827485

R. Sharp, S. Pater, J. Cook, R. Peat

引用次数: 0

The Arrhenius relation for electronics in extreme temperature conditions 极端温度条件下电子学的阿伦尼乌斯关系

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827344

J. Manca, W. Wondrak, K. Croes, W. De Ceuninck, V. D’Haeger, L. de Schepper, L. Tielemans

引用次数: 5

Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism 基于扩散机制的SOI mosfet高温失态电流特性研究

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827468

T. Rudenko, V. Lysenko, V. Kilchytska, A. Rudenko, J. Colinge

引用次数: 5

High-temperature characterization of a PD SOI CMOS process with LDMOS and lateral bipolar structures 具有LDMOS和侧双极结构的PD SOI CMOS工艺的高温表征

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827467

S. Adriaensen, V. Dessard, P. Delatte, J.R. Querol, D. Flandre, S. Richter

引用次数: 3

A bandgap circuit operating up to 300/spl deg/C using lateral bipolar transistors in thin-film CMOS-SOI technology 采用薄膜CMOS-SOI技术的横向双极晶体管，工作温度高达300/spl度/C的带隙电路

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827461

S. Adriaensen, V. Dessard, D. Flandre

引用次数: 8