采用薄膜CMOS-SOI技术的横向双极晶体管，工作温度高达300/spl度/C的带隙电路

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI:10.1109/HITEN.1999.827461

S. Adriaensen, V. Dessard, D. Flandre

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引用次数: 8

摘要

在SOI(绝缘体上硅)FD(完全耗尽)CMOS技术中设计并实现了具有3V输出的电压参考电路，适用于非常宽的温度范围应用。该设计集成了薄膜横向双极晶体管和扩散电阻。该电路已在整个工作温度范围(25/spl°C-300/spl°C)下制造和测试，其温度系数低于100 ppm//spl°C。

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A bandgap circuit operating up to 300/spl deg/C using lateral bipolar transistors in thin-film CMOS-SOI technology

A voltage reference circuit with 3V output has been designed and implemented in a SOI (Silicon-On-Insulator) FD (Fully-Depleted) CMOS technology for very wide temperature range applications. The design integrates thin-film lateral bipolar transistors and diffusion resistors. The circuit has been fabricated and tested over the full operating temperature range (25/spl deg/C-300/spl deg/C) and features a temperature coefficient lower than 100 ppm//spl deg/C.

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HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)

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