HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)最新文献

Supply and demand for high temperature electronics 高温电子产品的供求关系

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827477

S. Lande

引用次数: 21

DCB substrates: solution for high temperature applications DCB基板:高温应用的解决方案

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827465

J. Schulz-Harder

{"title":"DCB substrates: solution for high temperature applications","authors":"J. Schulz-Harder","doi":"10.1109/HITEN.1999.827465","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827465","url":null,"abstract":"Summary form only given. DBC (Direct Bonded Copper) substrates have been proved over many years to be the most cost effective and reliable solution for circuits in power electronics. The bases of these substrates are ceramics, either alumina or aluminium nitride. The metallisation consists of copper layers bonded to ceramic at high temperature. DBC differs from thick film metallisation in that the copper layers consist of pure metal with high electric conductivity whereas the DBC process is carried out at temperatures above 1065/spl deg/C; the working temperature of DBC substrates can be up to 900/spl deg/C. DBC substrates are successfully brazed to covar at temperatures of 850/spl deg/C to 900/spl deg/C without affecting their functionality. At temperatures above 500/spl deg/C in hydrogen atmosphere the copper/ceramic interface peel strength is reduced. The copper surface of DBC substrates can be protected against oxidation by plating (Ni+Au) as a standard process. The range thickness of DCB is between 0.2 and 0.7 mm. Standard thicknesses are 0.2 mm and 0.3 mm. The reliability of DBC substrate temperature cycling is dependent on the absolute temperature and the temperature range. For military and automotive specifications the reliability could be improved by reducing the copper thickness at the copper edges by a simple low cost etching process.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116872387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Reliability physics and electronics design for high operating temperatures 高工作温度下的可靠性物理和电子设计

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827476

B. Peat

引用次数: 0

Temperature dependence of avalanche breakdown in GaAs p-i-n diodes 砷化镓p-i-n二极管雪崩击穿的温度依赖性

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827492

J. David, R. Ghin, S.A. Plimmer, G. Rees, R. Grey

引用次数: 0

The art of high temperature FD-SOI CMOS 高温FD-SOI CMOS工艺

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827472

L. Demeus, P. Delatte, V. Dessard, S. Adriaensen, A. Viviani, C. Renaux, D. Flandre

引用次数: 3

A study on the high-temperature subthreshold slope in SOI MOSFETs SOI mosfet高温亚阈值斜率的研究

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827462

T. Rudenko, V. Lysenko, A. Rudenko, V. Kilchytska, J. Colinge

引用次数: 0

Die attach and wirebond systems for high temperature electronics 用于高温电子器件的模具连接和焊丝连接系统

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827464

F. McCluskey, R. Jain, N. Tiwari, R. Grzybowski, J. Benoit, S. Lin

{"title":"Die attach and wirebond systems for high temperature electronics","authors":"F. McCluskey, R. Jain, N. Tiwari, R. Grzybowski, J. Benoit, S. Lin","doi":"10.1109/HITEN.1999.827464","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827464","url":null,"abstract":"Summary form only given. Creating a reliable electronic system that can operate at temperatures in excess of 200/spl deg/C requires more than just developing ICs that can function at these temperatures. It also requires developing packaging technologies that can accommodate device operation. Three critical packaging related failure mechanisms in components and modules at high temperatures are intermetallic formation at the wire bonds, wire annealing at the midspan, and die attach fatigue at the die to substrate interface. This paper will describe the relative reliability of various die attach materials and wirebonding systems proposed for high temperature electronics. Results of die shear, bond shear, and wire pull strength measurements on die attach and wirebond materials, respectively, after aging for 1000 hours at 260/spl deg/C and after temperature cycling from -55/spl deg/C to 260/spl deg/C for 1000 cycles will be presented. These results will be analyzed using a new viscoplastic shear stress and damage model for die attach fatigue and a new model for wire annealing which can be used to assess the susceptibility of high temperature electronic modules to failure by these mechanisms.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123115158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Electrical and optical properties of Mg ion implanted GaN p-n junctions 镁离子注入GaN p-n结的电学和光学性质

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827470

E. Kalinina, A. Zubrilov, A. Strel'chuk, V. A. Solov'ev, V. Dmitriev

引用次数: 1

Effect of irradiation on excess currents in 6H-SiC p-n structures 辐照对6H-SiC p-n结构中过量电流的影响

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827474

A. Strel'chuk, V. Kozlovski, N. Smirnova, J.J.P. Pil'kevich, M. Rastegaeva

引用次数: 1

Matched expansion probe cards 匹配的扩展探针卡

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI: 10.1109/HITEN.1999.827490

E. Ehlermann

引用次数: 0