Temperature dependence of avalanche breakdown in GaAs p-i-n diodes

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI:10.1109/HITEN.1999.827492

J. David, R. Ghin, S.A. Plimmer, G. Rees, R. Grey

引用次数: 0

Abstract

We investigate the changes to the avalanche multiplication and breakdown voltage in a series of epitaxially grown GaAs p-i-n diodes with nominal intrinsic region thicknesses of 1/spl mu/m, 0.5/spl mu/m and O.1/spl mu/m, over the temperature range 20K-500K.

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砷化镓p-i-n二极管雪崩击穿的温度依赖性

我们研究了在20K-500K温度范围内，标称本征区厚度分别为1/spl mu/m、0.5/spl mu/m和0.1 /spl mu/m的外延生长GaAs p-i-n二极管雪崩倍增和击穿电压的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)

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