HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)最新文献

{"title":"Electrical contacts and degradation mechanisms","authors":"H. Fecht, J. W. Mrosk, M. Werner","doi":"10.1109/HITEN.1999.827483","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827483","url":null,"abstract":"The proper choice of a metal for contact to a semiconductor (e.g. Si, GaAs, SiC, diamond at high temperatures) or oxide (piezoelectric substrate) is a major challenge, in particular for the design and fabrication of integrated circuits. As device dimensions in very large scale integration (VLSI) nowadays approach submicrometer scales only limited penetration of the metal into the semiconductor in the range of several nanometers can be accepted. An overview will be given regarding some basic materials issues for contact materials in particular considering the degradation at high temperatures.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129401122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Perspective on high temperature electronics in Japan","authors":"M. Tajima","doi":"10.1109/HITEN.1999.827487","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827487","url":null,"abstract":"Recent research activities on high temperature electronics in Japan are reviewed. Two national projects related to this area are currently in progress under the Ministry of International Trade and Industry (MITI): \"R and D on Combustion Control Systems for Energy Conservation\" and \"R and D of Ultra-Low-Loss Power Device Technologies.\" The two independent projects are both aimed at energy conservation. The projects deal with SiC material science and device technologies that break through the performance limitations of current Si devices. The transfer of technology from energy electronics to high temperature electronics is confidently expected.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115290978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability of commercial plastic encapsulated microelectronics at temperatures from 125/spl deg/C to 300/spl deg/C","authors":"P. Mccluskey, K. Mensah, C. O'Connor, F. Lilie., A. Gallo, J. Fink","doi":"10.1109/HITEN.1999.827342","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827342","url":null,"abstract":"Over 97% of all integrated circuits produced today are available only in plastic encapsulated, surface mountable, commercial grade or industrial grade versions. This is especially true for the most advanced technologies, such as high-speed microprocessors. The cost, availability, and functionality advantages of these devices are causing many electronics manufacturers to consider using them in elevated temperature applications such as avionics and automotive under-hood electronic systems to ensure early affordable access to leading edge technology. However, manufacturers only guarantee the operation of commercial devices in the 0/spl deg/C to 70/spl deg/C temperature range, and the industrial devices in the -40/spl deg/C to 85/spl deg/C temperature range. This paper describes the first study which addresses the reliability of plastic encapsulated microcircuits (PEMs) in the range from 125/spl deg/C to 300/spl deg/C, well outside the manufacturer's suggested temperature limits. Previous work has indicated that PEMs sold for use in the commercial and industrial temperature ranges can often operate within the manufacturer's suggested electrical parameter specifications at much higher temperatures. For example, in this study, a Motorola MC68332 microcontroller, which is widely used in avionic systems, remained fully functional to 180/spl deg/C. This is in accordance with previous work that indicated no fundamental constraints to the operation of silicon devices at temperatures up to 200/spl deg/C. However, this study also revealed that industrial grade, plastic encapsulated MC68332 devices had less than half the lifespan at 180/spl deg/C of similar MC68332 devices packaged in hermetic ceramic packages. In addition to the MC68332, the other nine types of plastic components studied had a shorter lifespan at 180/spl deg/C than their ceramic packaged counterparts. Outgassing of flame retardants with the associated catalysis of the growth of intermetallics was determined to be the principal cause of failure in the plastic components. Further studies conducted on 84-lead PQFP leadframes encapsulated in two different molding compounds revealed that the plastic encapsulant itself begins to lose its ability to insulate leads at temperatures greater than 250/spl deg/C and can actually combust at temperatures greater than 300/spl deg/C. Both insulation resistance degradation and cracking were found to be more prevalent in novalac than biphenyl. In summary, these studies have shown that while plastic encapsulated microelectronics can operate at temperatures above 125/spl deg/C, they have less than half the life of ceramic microcircuits at 180/spl deg/C and they begin to show signs of insulation resistance degradation after 300 hours at 250/spl deg/C.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133788327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal management and thermomechanical optimization at higher temperatures","authors":"M. Topfer, E. Kaulfersch, B. Michel, H. Reichl","doi":"10.1109/HITEN.1999.827478","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827478","url":null,"abstract":"Summary form only given. For thermal management one has to distinguish between two categories: the heating of electronic components by their environment and heating due to power dissipation in the electronics. In the first case thermal insulation is essential for component protection. The authors show the limits of cooling mechanisms using liquids (liquid coolers and heat pipes) as well as electrothermal cooling. Furthermore, possibilities of passive cooling (heat spreading) are discussed. From the viewpoint of thermomechanical aspects, high temperature applications are complicated, because large temperature intervals drastically increase thermal mismatch in comparison to normal conditions. Effective cooling and equalizing temperature distributions are suitable to lower thermal mismatch by avoiding excessive temperature gradients. Thermomechanical principles like CTE matching or applying ductile intermediate layers, well known from low temperature packaging, become extremely more important. Some aspects of mechanical stresses on the acceleration of diffusion processes are discussed.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123451423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}