HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)最新文献_第3页

Problems of obtaining and some property of solid solutions (SiC)/sub 1-x/(AlN)/sub x/ 固溶体(SiC)/sub - 1-x/(AlN)/sub -x/的制备问题及一些性质

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827471

G. Safaraliev, M. K. Kurbanov, S.A. Nurmagomedov, N.V. Ofitcerova, A.A. Hiijarat

引用次数: 0

Reliability of commercial plastic encapsulated microelectronics at temperatures from 125/spl deg/C to 300/spl deg/C 商用塑料封装微电子器件在125/spl℃至300/spl℃温度下的可靠性

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827481

P. Mccluskey, K. Mensah, C. O'Connor, F. Lilie., A. Gallo, J. Fink

{"title":"Reliability of commercial plastic encapsulated microelectronics at temperatures from 125/spl deg/C to 300/spl deg/C","authors":"P. Mccluskey, K. Mensah, C. O'Connor, F. Lilie., A. Gallo, J. Fink","doi":"10.1109/HITEN.1999.827481","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827481","url":null,"abstract":"This paper describes the first study which addresses the reliability of plastic encapsulated microcircuits (PEMs) in the range from 125/spl deg/C to 300/spl deg/C, well outside the manufacturer's suggested temperature limits. A Motorola MC68332 microcontroller, widely used in avionic systems, remained fully functional to 180/spl deg/C. However, industrial grade, plastic encapsulated MC68332 devices had less than half the lifespan at 180/spl deg/C of similar MC68332 devices packaged in hermetic ceramic packages. In addition, other types of plastic components studied had a shorter lifespan at 180/spl deg/C than their ceramic packaged counterparts. Outgassing of flame retardants with the associated catalysis of the growth of intermetallics was determined to be the principal cause of failure. Further studies on 84-lead PQFP lead frames encapsulated in two different molding compounds revealed that the plastic encapsulant itself begins to lose its ability to insulate leads at temperatures greater than 250/spl deg/C and can actually combust at temperatures greater than 300/spl deg/C. Both insulation resistance degradation and cracking were found to be more prevalent in novalac than biphenyl.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"308 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121295969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 22

Long-term stability and thermal cycling of thermocouple contacts to Si up to 350/spl deg/C 长期稳定性和热循环的热电偶接触到Si高达350/spl度/C

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827469

H. Ernst, L. Rauscher, G. Bahr, E. Muller, W. Kaysser

{"title":"Long-term stability and thermal cycling of thermocouple contacts to Si up to 350/spl deg/C","authors":"H. Ernst, L. Rauscher, G. Bahr, E. Muller, W. Kaysser","doi":"10.1109/HITEN.1999.827469","DOIUrl":"https://doi.org/10.1109/HITEN.1999.827469","url":null,"abstract":"We report on the long-term stability and thermal cycling of thermocouple contacts to silicon up to 350/spl deg/C. Such contacts call be used as a lead for electric signals while at the same time measuring the temperature immediately at the semiconductor surface. Contacts were fabricated using Au based solders at temperatures between 600 and 850/spl deg/C in vacuum. Different types of thermocouple materials have been tested with good results for a type E thermocouple. The characterisation of the contacts comprises electrical measurements (I-V characteristics) and determination of elemental and phase composition by EDX mapping in the contact region. The long-term stability of the contacts has been investigated during heat treatment up to 400 h at 300/spl deg/C. Thermal cycling tests were performed between /spl sim/200/spl deg/C and 350/spl deg/C, continuously measuring the contact resistance. The tests showed a good mechanical and electrical stability of the contacts. For application temperature above 350/spl deg/C, metallic diffusion barriers or layer stacking together with special high temperature solders can be used to form electrically stable thermocouple contacts to Si.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114927773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Thin film diamond devices for high temperature electronic applications: hydrogen doped structures 用于高温电子应用的薄膜金刚石器件:氢掺杂结构

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827496

Hui-Chang Jin, L. Pang, M. Whitfield, R. Jackman

引用次数: 1

Interconnections constrained by convention 受约定约束的互连

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827475

A. Chilton

引用次数: 0

New semiconductor hetero-substrates for high temperature applications using the Smart-Cut(R) technology 使用Smart-Cut(R)技术的高温应用的新型半导体异质衬底

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827466

B. Aspar, J. Joly, C. Jaussaud, L. Di Cioccio, M. Bruel, H. Moriceau, F. Letertre, E. Hugonnard-Bruyere

引用次数: 1

Thermal models for semiconductor device simulation 半导体器件模拟的热模型

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827343

V. Palankovski, Siegfried Selberherr

引用次数: 30

Efficient temperature control of micro channel cooled diode laser bars 微通道冷却二极管激光棒的高效温度控制

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827479

K. Unger, D. Muller, D. Lorenzen

引用次数: 2

Electroless Ni-P and Ni-W-P films as a barrier for thermostimulated diffusion of gold into semiconductor 化学镀Ni-P和Ni-W-P薄膜作为金在半导体中热激发扩散的屏障

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827473

L.I. Stepanova, T.I. Bodrkh, V. V. Sviridov

引用次数: 2

Needs and applications of high temperature LSIs for automotive electronic systems 汽车电子系统中高温lsi的需求与应用

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI: 10.1109/HITEN.1999.827345

M. Hattori

引用次数: 36