H. Ernst, L. Rauscher, G. Bahr, E. Muller, W. Kaysser
{"title":"长期稳定性和热循环的热电偶接触到Si高达350/spl度/C","authors":"H. Ernst, L. Rauscher, G. Bahr, E. Muller, W. Kaysser","doi":"10.1109/HITEN.1999.827469","DOIUrl":null,"url":null,"abstract":"We report on the long-term stability and thermal cycling of thermocouple contacts to silicon up to 350/spl deg/C. Such contacts call be used as a lead for electric signals while at the same time measuring the temperature immediately at the semiconductor surface. Contacts were fabricated using Au based solders at temperatures between 600 and 850/spl deg/C in vacuum. Different types of thermocouple materials have been tested with good results for a type E thermocouple. The characterisation of the contacts comprises electrical measurements (I-V characteristics) and determination of elemental and phase composition by EDX mapping in the contact region. The long-term stability of the contacts has been investigated during heat treatment up to 400 h at 300/spl deg/C. Thermal cycling tests were performed between /spl sim/200/spl deg/C and 350/spl deg/C, continuously measuring the contact resistance. The tests showed a good mechanical and electrical stability of the contacts. For application temperature above 350/spl deg/C, metallic diffusion barriers or layer stacking together with special high temperature solders can be used to form electrically stable thermocouple contacts to Si.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Long-term stability and thermal cycling of thermocouple contacts to Si up to 350/spl deg/C\",\"authors\":\"H. Ernst, L. Rauscher, G. Bahr, E. Muller, W. Kaysser\",\"doi\":\"10.1109/HITEN.1999.827469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the long-term stability and thermal cycling of thermocouple contacts to silicon up to 350/spl deg/C. Such contacts call be used as a lead for electric signals while at the same time measuring the temperature immediately at the semiconductor surface. Contacts were fabricated using Au based solders at temperatures between 600 and 850/spl deg/C in vacuum. Different types of thermocouple materials have been tested with good results for a type E thermocouple. The characterisation of the contacts comprises electrical measurements (I-V characteristics) and determination of elemental and phase composition by EDX mapping in the contact region. The long-term stability of the contacts has been investigated during heat treatment up to 400 h at 300/spl deg/C. Thermal cycling tests were performed between /spl sim/200/spl deg/C and 350/spl deg/C, continuously measuring the contact resistance. The tests showed a good mechanical and electrical stability of the contacts. For application temperature above 350/spl deg/C, metallic diffusion barriers or layer stacking together with special high temperature solders can be used to form electrically stable thermocouple contacts to Si.\",\"PeriodicalId\":297771,\"journal\":{\"name\":\"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HITEN.1999.827469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HITEN.1999.827469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Long-term stability and thermal cycling of thermocouple contacts to Si up to 350/spl deg/C
We report on the long-term stability and thermal cycling of thermocouple contacts to silicon up to 350/spl deg/C. Such contacts call be used as a lead for electric signals while at the same time measuring the temperature immediately at the semiconductor surface. Contacts were fabricated using Au based solders at temperatures between 600 and 850/spl deg/C in vacuum. Different types of thermocouple materials have been tested with good results for a type E thermocouple. The characterisation of the contacts comprises electrical measurements (I-V characteristics) and determination of elemental and phase composition by EDX mapping in the contact region. The long-term stability of the contacts has been investigated during heat treatment up to 400 h at 300/spl deg/C. Thermal cycling tests were performed between /spl sim/200/spl deg/C and 350/spl deg/C, continuously measuring the contact resistance. The tests showed a good mechanical and electrical stability of the contacts. For application temperature above 350/spl deg/C, metallic diffusion barriers or layer stacking together with special high temperature solders can be used to form electrically stable thermocouple contacts to Si.