长期稳定性和热循环的热电偶接触到Si高达350/spl度/C

H. Ernst, L. Rauscher, G. Bahr, E. Muller, W. Kaysser
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引用次数: 2

摘要

我们报告了高达350/spl°C的硅热电偶触点的长期稳定性和热循环。这种触点被用作电信号的引线,同时立即测量半导体表面的温度。触点是用金基焊料在真空温度为600 ~ 850℃的条件下制备的。对不同类型的热电偶材料进行了测试,并获得了E型热电偶的良好结果。触点的表征包括电测量(I-V特性)和通过接触区域的EDX映射确定元素和相组成。在300/spl度/C下热处理400小时时,研究了触点的长期稳定性。在/spl sim/200/spl°C到350/spl°C之间进行热循环试验,连续测量接触电阻。试验表明,触点具有良好的机械稳定性和电气稳定性。对于高于350/spl℃的应用温度,可以使用金属扩散屏障或层堆叠与特殊的高温焊料一起形成与Si的电稳定热电偶接触。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Long-term stability and thermal cycling of thermocouple contacts to Si up to 350/spl deg/C
We report on the long-term stability and thermal cycling of thermocouple contacts to silicon up to 350/spl deg/C. Such contacts call be used as a lead for electric signals while at the same time measuring the temperature immediately at the semiconductor surface. Contacts were fabricated using Au based solders at temperatures between 600 and 850/spl deg/C in vacuum. Different types of thermocouple materials have been tested with good results for a type E thermocouple. The characterisation of the contacts comprises electrical measurements (I-V characteristics) and determination of elemental and phase composition by EDX mapping in the contact region. The long-term stability of the contacts has been investigated during heat treatment up to 400 h at 300/spl deg/C. Thermal cycling tests were performed between /spl sim/200/spl deg/C and 350/spl deg/C, continuously measuring the contact resistance. The tests showed a good mechanical and electrical stability of the contacts. For application temperature above 350/spl deg/C, metallic diffusion barriers or layer stacking together with special high temperature solders can be used to form electrically stable thermocouple contacts to Si.
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