Thermal models for semiconductor device simulation

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI:10.1109/HITEN.1999.827343

V. Palankovski, Siegfried Selberherr

引用次数: 30

Abstract

We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expressed is functions of the lattice temperature and in the case of semiconductor alloys of the material composition.

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半导体器件模拟的热模型

我们提出了适用于所有相关金刚石和锌-闪锌矿结构半导体的导热系数和比热的模型。它们是晶格温度的函数，在半导体合金的情况下是材料成分的函数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)

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