The art of high temperature FD-SOI CMOS

This paper presents the latest results of our research on SOI (Silicon-On-Insulator) technology for high temperature electronics. We focus on Fully-Depleted SOI (FD-SOI) because it achieves superior high temperature results compared with Partially Depleted (PD-SOI) technology. Our interest includes both technology considerations and circuit studies. We show that FD-SOI is an efficient way to implement high performance circuits for high temperature applications. Some essential aspects for the development of reliable high temperature SOI analog circuits are addressed: lifetime, voltage reference, noise and basic analog building blocks. We discuss some technological characteristics of our SOI process, then focus on lateral bipolar transistors (FD-SOI-CMOS Compatible) which are necessary for good bandgap references, compare noise performance in FD and PD SOI technologies, and finally present some of our latest results relating to critical analog building blocks for high temperature electronics.