砷化镓p-i-n二极管雪崩击穿的温度依赖性

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI:10.1109/HITEN.1999.827492

J. David, R. Ghin, S.A. Plimmer, G. Rees, R. Grey

{"title":"砷化镓p-i-n二极管雪崩击穿的温度依赖性","authors":"J. David, R. Ghin, S.A. Plimmer, G. Rees, R. Grey","doi":"10.1109/HITEN.1999.827492","DOIUrl":null,"url":null,"abstract":"We investigate the changes to the avalanche multiplication and breakdown voltage in a series of epitaxially grown GaAs p-i-n diodes with nominal intrinsic region thicknesses of 1/spl mu/m, 0.5/spl mu/m and O.1/spl mu/m, over the temperature range 20K-500K.","PeriodicalId":297771,"journal":{"name":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","volume":"384 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature dependence of avalanche breakdown in GaAs p-i-n diodes\",\"authors\":\"J. David, R. Ghin, S.A. Plimmer, G. Rees, R. Grey\",\"doi\":\"10.1109/HITEN.1999.827492\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the changes to the avalanche multiplication and breakdown voltage in a series of epitaxially grown GaAs p-i-n diodes with nominal intrinsic region thicknesses of 1/spl mu/m, 0.5/spl mu/m and O.1/spl mu/m, over the temperature range 20K-500K.\",\"PeriodicalId\":297771,\"journal\":{\"name\":\"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)\",\"volume\":\"384 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HITEN.1999.827492\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HITEN.1999.827492","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

我们研究了在20K-500K温度范围内，标称本征区厚度分别为1/spl mu/m、0.5/spl mu/m和0.1 /spl mu/m的外延生长GaAs p-i-n二极管雪崩倍增和击穿电压的变化。

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Temperature dependence of avalanche breakdown in GaAs p-i-n diodes

We investigate the changes to the avalanche multiplication and breakdown voltage in a series of epitaxially grown GaAs p-i-n diodes with nominal intrinsic region thicknesses of 1/spl mu/m, 0.5/spl mu/m and O.1/spl mu/m, over the temperature range 20K-500K.

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HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)

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