Effect of irradiation on excess currents in 6H-SiC p-n structures

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-07 DOI:10.1109/HITEN.1999.827474

A. Strel'chuk, V. Kozlovski, N. Smirnova, J.J.P. Pil'kevich, M. Rastegaeva

引用次数: 1

Abstract

Summary form only given. The results of investigations of the influence exerted by different kinds of irradiation of SiC p-n structures on the magnitude of forward and reverse excess currents are presented. The objects of study were 6H-SiC p/sup +/-n structures based on commercial n and p epitaxial layers.

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辐照对6H-SiC p-n结构中过量电流的影响

只提供摘要形式。本文给出了不同辐照方式对SiC p-n结构正向和反向过量电流大小影响的研究结果。研究对象是基于商用n和p外延层的6H-SiC p/sup +/-n结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)

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