6H-SiC MOS器件的工艺技术及高温性能

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) Pub Date : 1999-07-04 DOI:10.1109/HITEN.1999.827495

U. Schmid, W. Wondrak

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引用次数: 2

摘要

本文介绍了6H-SiC MOS器件的制备和表征。我们从门控二极管测量开始，确定热生长的氧化物质量，描述单增强模式mosfet的高温行为，并展示单片差分放大器的静态传递特性。在900 ~ 1150℃5种不同的接触退火温度下，研究了栅极氧化物。接触退火温度在900/spl°C和1050/spl°C之间，只会使N/sub /从1.0/spl middot/10/sup 12/ cm/sup -2/增加到1.6/spl middot/10/sup -2/ cm/sup -2/。预隧穿区域的漏电流非常低，约为4/spl /10/sup -9/ A/cm/sup 2/。阈值植入能够在同一晶圆上实现耗尽模式和增强模式器件。该技术被证明适用于集成电路的制造。

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Process technology and high temperature performance of 6H-SiC MOS devices

In this article, processing and characterization of 6H-SiC MOS devices is described. We start with gate controlled diode measurements determining the thermally grown oxide quality, describe the high temperature behavior of single enhancement-mode MOSFETs and present the static transfer characteristic of a monolithic differential amplifier. The gate oxides are investigated after five different contact anneal temperatures between 900/spl deg/C and 1150/spl deg/C. Contact annealing temperatures between 900/spl deg/C and 1050/spl deg/C cause only a slight increase in N/sub it/ from 1.0/spl middot/10/sup 12/ cm/sup -2/ to 1.6/spl middot/10/sup -2/ cm/sup -2/. Leakage currents in the pre-tunneling region are very low and amount to about 4/spl middot/10/sup -9/ A/cm/sup 2/. Threshold implantations enable the realization of depletion- and enhancement-mode devices on the same wafer. This technology proves to be suited for the fabrication of integrated circuits.

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HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)

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