Process technology and high temperature performance of 6H-SiC MOS devices

Abstract

In this article, processing and characterization of 6H-SiC MOS devices is described. We start with gate controlled diode measurements determining the thermally grown oxide quality, describe the high temperature behavior of single enhancement-mode MOSFETs and present the static transfer characteristic of a monolithic differential amplifier. The gate oxides are investigated after five different contact anneal temperatures between 900/spl deg/C and 1150/spl deg/C. Contact annealing temperatures between 900/spl deg/C and 1050/spl deg/C cause only a slight increase in N/sub it/ from 1.0/spl middot/10/sup 12/ cm/sup -2/ to 1.6/spl middot/10/sup -2/ cm/sup -2/. Leakage currents in the pre-tunneling region are very low and amount to about 4/spl middot/10/sup -9/ A/cm/sup 2/. Threshold implantations enable the realization of depletion- and enhancement-mode devices on the same wafer. This technology proves to be suited for the fabrication of integrated circuits.