Diffusions barrier, an important layer for high temperature bonds

Abstract

Summary form only given. Sputtered Ta-Si-N films are investigated in view of their use as diffusion barriers. Deposition conditions and film properties such as atomic composition, crystallization temperature, surface roughness and, in particular, the amorphous structure as a function of the nitride concentration were analyzed by RBS, XRD and AFM. Their application as diffusion barriers in electromechanical microstructures and for interconnects with glass sealing are discussed.