The Arrhenius relation for electronics in extreme temperature conditions

Abstract

In the field of high temperature electronics some doubts have been expressed about the validity of the Arrhenius relation. In this paper the in-situ electrical measurement technique is presented to investigate the temperature dependence of failure mechanisms and conduction mechanisms of several material systems in a broad temperature region. Measurement results will be presented showing single-activation energy and multiple-activation energy behaviour of a.o. electrical conduction, degradation of resistances, electromigration and time dependent dielectric breakdown at high temperature conditions.